Monolithic integrated device of PIN diode and field effect transistor and method of manufacturing the same

A novel integrated arrangement of a PIN diode and a FET has (a) a HFET or MESFET as the FET; (b) a PIN diode formed of an undoped semiconductor layer with lateral P, I and N regions; and (c) a quasi-planar arrangement of the PIN diode and FET with the undoped semiconductor layer of the diode forming...

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Bibliographische Detailangaben

1. Verfasser:	BRUGGER, HANS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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