Method of making In-containing III/V semiconductor devices

A semiconductor device comprising In-contg. III-V material is mfd. by: (a) placing a body of the In-contg. III-V material in a reactor chamber; and (b) flowing a gas mixt. of N2 and BCl3 into the chamber and applying microwave power to the gas to form a plasma to remove some of the semiconductor mat...

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Hauptverfasser:	REN, FAN, HOBSON, WILLIAM SCOTT, LOPATA, JOHN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	REN, FAN HOBSON, WILLIAM SCOTT LOPATA, JOHN
description	A semiconductor device comprising In-contg. III-V material is mfd. by: (a) placing a body of the In-contg. III-V material in a reactor chamber; and (b) flowing a gas mixt. of N2 and BCl3 into the chamber and applying microwave power to the gas to form a plasma to remove some of the semiconductor material. The N2/BCl3 ratio is such that the etch rate of the material is at least 50% larger than the etch rate when the ratio is zero, all else being equal.
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language	eng ; fre ; ger
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subjects	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Method of making In-containing III/V semiconductor devices
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