Method and apparatus for hot carrier injection
The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain...
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| creator | BUDE, JEFFREY DEVIN O'CONNOR, KEVIN JOHN PINTO, MARK RICHARD |
| description | The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. The drain substrate bias induces a sufficient amount of secondary hot electrons to be formed with a sufficient amount of energy to overcome the energy barrier between the substrate and the floating gate to charge the floating gate. |
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In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | Method and apparatus for hot carrier injection |
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