Monolithic high frequency integrated circuit structure and method of manufacturing the same

Monolithic high frequency integrated circuit structure and method of manufacturing the same

A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LAMEY, DANIEL J, NGO, DAVID Q, BURGER, WAYNE R, CAMILLERI, NATALINO, COSTA, JULIO C, DRAGON, CHRISTOPHER P, LOVELACE, DAVID K
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LAMEY, DANIEL J
NGO, DAVID Q
BURGER, WAYNE R
CAMILLERI, NATALINO
COSTA, JULIO C
DRAGON, CHRISTOPHER P
LOVELACE, DAVID K
description A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0741413B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0741413B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0741413B13</originalsourceid><addsrcrecordid>eNqNyjEKwkAQRuE0FqLeYS4gGBKwVyI2goWdRRg2_2YHktm4O1t4exE8gNUrvreunreocRIL4ijIGMgnvArUvUnUMCY2DOQkuSJG2VJxVhKIdaAZFuJA0dPMWjx_RXQkC6DMM7bVyvOUsft1U9Gle5yveyyxR17YQWF9dz8c27qtm1Pd_LF8AFy6O6s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Monolithic high frequency integrated circuit structure and method of manufacturing the same</title><source>esp@cenet</source><creator>LAMEY, DANIEL J ; NGO, DAVID Q ; BURGER, WAYNE R ; CAMILLERI, NATALINO ; COSTA, JULIO C ; DRAGON, CHRISTOPHER P ; LOVELACE, DAVID K</creator><creatorcontrib>LAMEY, DANIEL J ; NGO, DAVID Q ; BURGER, WAYNE R ; CAMILLERI, NATALINO ; COSTA, JULIO C ; DRAGON, CHRISTOPHER P ; LOVELACE, DAVID K</creatorcontrib><description>A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INDUCTANCES ; MAGNETS ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SEMICONDUCTOR DEVICES ; TRANSFORMERS</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040204&amp;DB=EPODOC&amp;CC=EP&amp;NR=0741413B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040204&amp;DB=EPODOC&amp;CC=EP&amp;NR=0741413B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAMEY, DANIEL J</creatorcontrib><creatorcontrib>NGO, DAVID Q</creatorcontrib><creatorcontrib>BURGER, WAYNE R</creatorcontrib><creatorcontrib>CAMILLERI, NATALINO</creatorcontrib><creatorcontrib>COSTA, JULIO C</creatorcontrib><creatorcontrib>DRAGON, CHRISTOPHER P</creatorcontrib><creatorcontrib>LOVELACE, DAVID K</creatorcontrib><title>Monolithic high frequency integrated circuit structure and method of manufacturing the same</title><description>A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>MAGNETS</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEKwkAQRuE0FqLeYS4gGBKwVyI2goWdRRg2_2YHktm4O1t4exE8gNUrvreunreocRIL4ijIGMgnvArUvUnUMCY2DOQkuSJG2VJxVhKIdaAZFuJA0dPMWjx_RXQkC6DMM7bVyvOUsft1U9Gle5yveyyxR17YQWF9dz8c27qtm1Pd_LF8AFy6O6s</recordid><startdate>20040204</startdate><enddate>20040204</enddate><creator>LAMEY, DANIEL J</creator><creator>NGO, DAVID Q</creator><creator>BURGER, WAYNE R</creator><creator>CAMILLERI, NATALINO</creator><creator>COSTA, JULIO C</creator><creator>DRAGON, CHRISTOPHER P</creator><creator>LOVELACE, DAVID K</creator><scope>EVB</scope></search><sort><creationdate>20040204</creationdate><title>Monolithic high frequency integrated circuit structure and method of manufacturing the same</title><author>LAMEY, DANIEL J ; NGO, DAVID Q ; BURGER, WAYNE R ; CAMILLERI, NATALINO ; COSTA, JULIO C ; DRAGON, CHRISTOPHER P ; LOVELACE, DAVID K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0741413B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2004</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>MAGNETS</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>LAMEY, DANIEL J</creatorcontrib><creatorcontrib>NGO, DAVID Q</creatorcontrib><creatorcontrib>BURGER, WAYNE R</creatorcontrib><creatorcontrib>CAMILLERI, NATALINO</creatorcontrib><creatorcontrib>COSTA, JULIO C</creatorcontrib><creatorcontrib>DRAGON, CHRISTOPHER P</creatorcontrib><creatorcontrib>LOVELACE, DAVID K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAMEY, DANIEL J</au><au>NGO, DAVID Q</au><au>BURGER, WAYNE R</au><au>CAMILLERI, NATALINO</au><au>COSTA, JULIO C</au><au>DRAGON, CHRISTOPHER P</au><au>LOVELACE, DAVID K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Monolithic high frequency integrated circuit structure and method of manufacturing the same</title><date>2004-02-04</date><risdate>2004</risdate><abstract>A high frequency power FET device (22) is integrated with passive components (23,24,26,28,31), an electro-static discharge (ESD) device (27,127,227), and/or a logic structure (29) on a semiconductor body (13) to form a monolithic high frequency integrated circuit structure (10). The high frequency power FET device (22) includes a grounded source configuration. The logic structure (29) utilizes the high frequency power FET structure in a grounded source configuration as one device in a CMOS implementation.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP0741413B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
title Monolithic high frequency integrated circuit structure and method of manufacturing the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T17%3A05%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LAMEY,%20DANIEL%20J&rft.date=2004-02-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0741413B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true