Trenched field effect transistor with PN depletion barrier

A trenched MOSFET in its on-state conducts current through an accumulation region and through an inverted depletion barrier layer located along the trench sidewalls. Blocking is achieved by gate control depletion of the adjacent region and by the depletion barrier layer (having the appearance of &qu...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FLOYD, BRIAN H, PITZER, DORMAN C, CHANG, MIKE F, HSHEIEH, FWU-IUAN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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