Asymmetric low power MOS devices

Low threshold voltage MOS devices having asymmetric halo implants are disclosed herein. An asymmetric halo implant provides a pocket region (47) located under a device's source (36) or drain (38) near where the source (or drain) edge abuts the device's channel region (44). The pocket regio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BURR, JAMES B, BRASSINGTON, MICHAEL P
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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