Semiconductor device comprising a plurality of semiconductor elements

A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically conne...

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Hauptverfasser: TANAKA, AKIRA, SAITO, RYUICHI, HOSOKAWA, TAKASHI, KOIZUMI, MASAHIRO, KURIHARA, YASUTOSHI, KOIKE, YOSHIHIKO, YAMADA, KAZUJI, SUZUKI, KAZUHIRO, SEKINE, SHIGEKI, SHIMIZU, HIDEO, HARAMAKI, TAKASHI, KUSHIMA, TADAO, KOKUBUN, HIDEYA, SAWAHATA, MAMORU, KOIKE, NOBUYA, KOBAYASHI, ISAO, HIGASHIMURA, YUTAKA, ONUKI, JIN
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Sprache:eng ; fre ; ger
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creator TANAKA, AKIRA
SAITO, RYUICHI
HOSOKAWA, TAKASHI
KOIZUMI, MASAHIRO
KURIHARA, YASUTOSHI
KOIKE, YOSHIHIKO
YAMADA, KAZUJI
SUZUKI, KAZUHIRO
SEKINE, SHIGEKI
SHIMIZU, HIDEO
HARAMAKI, TAKASHI
KUSHIMA, TADAO
KOKUBUN, HIDEYA
SAWAHATA, MAMORU
KOIKE, NOBUYA
KOBAYASHI, ISAO
HIGASHIMURA, YUTAKA
ONUKI, JIN
description A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes (15a,15b,17,18,19) of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base (13), the upper surface of the heat dissipating base being covered with a member (12) for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
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environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.</description><language>eng ; fre ; ger</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; 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subjects APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
title Semiconductor device comprising a plurality of semiconductor elements
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