ELECTRICAL INTERCONNECT STRUCTURES
Electrical interconnect structures comprised of high temperature superconducting signal layers on a substrate bonded to one another or optionally to a base substructure containing power and ground planes and processes for their preparation are disclosed.
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| creator | DOROTHY, ROBERT, GLENN LAUBACHER, DANIEL, BRUCE FACE, DEAN, WILLETT |
| description | Electrical interconnect structures comprised of high temperature superconducting signal layers on a substrate bonded to one another or optionally to a base substructure containing power and ground planes and processes for their preparation are disclosed. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0674808A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0674808A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0674808A13</originalsourceid><addsrcrecordid>eNrjZFBy9XF1DgnydHb0UfD0C3ENcvb38wOKKASHBIU6h4QGuQbzMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ41wADM3MTCwMLR0NjIpQAABywIns</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTRICAL INTERCONNECT STRUCTURES</title><source>esp@cenet</source><creator>DOROTHY, ROBERT, GLENN ; LAUBACHER, DANIEL, BRUCE ; FACE, DEAN, WILLETT</creator><creatorcontrib>DOROTHY, ROBERT, GLENN ; LAUBACHER, DANIEL, BRUCE ; FACE, DEAN, WILLETT</creatorcontrib><description>Electrical interconnect structures comprised of high temperature superconducting signal layers on a substrate bonded to one another or optionally to a base substructure containing power and ground planes and processes for their preparation are disclosed.</description><edition>6</edition><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; METALLURGY ; PRINTED CIRCUITS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951004&DB=EPODOC&CC=EP&NR=0674808A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19951004&DB=EPODOC&CC=EP&NR=0674808A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DOROTHY, ROBERT, GLENN</creatorcontrib><creatorcontrib>LAUBACHER, DANIEL, BRUCE</creatorcontrib><creatorcontrib>FACE, DEAN, WILLETT</creatorcontrib><title>ELECTRICAL INTERCONNECT STRUCTURES</title><description>Electrical interconnect structures comprised of high temperature superconducting signal layers on a substrate bonded to one another or optionally to a base substructure containing power and ground planes and processes for their preparation are disclosed.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>METALLURGY</subject><subject>PRINTED CIRCUITS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBy9XF1DgnydHb0UfD0C3ENcvb38wOKKASHBIU6h4QGuQbzMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ41wADM3MTCwMLR0NjIpQAABywIns</recordid><startdate>19951004</startdate><enddate>19951004</enddate><creator>DOROTHY, ROBERT, GLENN</creator><creator>LAUBACHER, DANIEL, BRUCE</creator><creator>FACE, DEAN, WILLETT</creator><scope>EVB</scope></search><sort><creationdate>19951004</creationdate><title>ELECTRICAL INTERCONNECT STRUCTURES</title><author>DOROTHY, ROBERT, GLENN ; LAUBACHER, DANIEL, BRUCE ; FACE, DEAN, WILLETT</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0674808A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>1995</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>METALLURGY</topic><topic>PRINTED CIRCUITS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>DOROTHY, ROBERT, GLENN</creatorcontrib><creatorcontrib>LAUBACHER, DANIEL, BRUCE</creatorcontrib><creatorcontrib>FACE, DEAN, WILLETT</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DOROTHY, ROBERT, GLENN</au><au>LAUBACHER, DANIEL, BRUCE</au><au>FACE, DEAN, WILLETT</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRICAL INTERCONNECT STRUCTURES</title><date>1995-10-04</date><risdate>1995</risdate><abstract>Electrical interconnect structures comprised of high temperature superconducting signal layers on a substrate bonded to one another or optionally to a base substructure containing power and ground planes and processes for their preparation are disclosed.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | ELECTRICAL INTERCONNECT STRUCTURES |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T21%3A12%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DOROTHY,%20ROBERT,%20GLENN&rft.date=1995-10-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0674808A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |