HIGH FREQUENCY OSCILLATOR COMPRISING COINTEGRATED THIN FILM RESONATOR AND ACTIVE DEVICE
A cointegrated high frequency oscillator including a thin film resonator and active devices formed on the same semiconductor substrate and by a process which is compatible with formation of both the thin film resonator and the active devices. The processes utilized in formation of the thin film reso...
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| creator | BURNS, STANLEY, G WEBER, ROBERT, J BRAYMEN, STEVE, D |
| description | A cointegrated high frequency oscillator including a thin film resonator and active devices formed on the same semiconductor substrate and by a process which is compatible with formation of both the thin film resonator and the active devices. The processes utilized in formation of the thin film resonator are adapted to microelectronic processing techniques such that the steps of formation of the active devices and the thin film resonator can be intermixed to the degree necessary to allow, for example, the metallization layers to serve as elements both of the active devices and the thin film resonator. |
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The processes utilized in formation of the thin film resonator are adapted to microelectronic processing techniques such that the steps of formation of the active devices and the thin film resonator can be intermixed to the degree necessary to allow, for example, the metallization layers to serve as elements both of the active devices and the thin film resonator.</description><edition>5</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION OF NOISE BY SUCH CIRCUITS ; GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS ; SEMICONDUCTOR DEVICES</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19931013&DB=EPODOC&CC=EP&NR=0560925A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19931013&DB=EPODOC&CC=EP&NR=0560925A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BURNS, STANLEY, G</creatorcontrib><creatorcontrib>WEBER, ROBERT, J</creatorcontrib><creatorcontrib>BRAYMEN, STEVE, D</creatorcontrib><title>HIGH FREQUENCY OSCILLATOR COMPRISING COINTEGRATED THIN FILM RESONATOR AND ACTIVE DEVICE</title><description>A cointegrated high frequency oscillator including a thin film resonator and active devices formed on the same semiconductor substrate and by a process which is compatible with formation of both the thin film resonator and the active devices. 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The processes utilized in formation of the thin film resonator are adapted to microelectronic processing techniques such that the steps of formation of the active devices and the thin film resonator can be intermixed to the degree necessary to allow, for example, the metallization layers to serve as elements both of the active devices and the thin film resonator.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION OF NOISE BY SUCH CIRCUITS GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES |
| title | HIGH FREQUENCY OSCILLATOR COMPRISING COINTEGRATED THIN FILM RESONATOR AND ACTIVE DEVICE |
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