Complementary subcollectors with silicon epitaxial layers

A process, compatible with bipolar and CMOS silicon device manufacturing for fabricating complementary buried doped regions in a silicon substrate. An N+ doped region (12) is formed in the silicon substrate by known methods of arsenic doping and drive in. This is followed by depositing a first thin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LECHATON, JOHN S, MEI, SHAW-NING, SMADI, MITHKAL MOHD, SCHEPIS, DOMINIC JOSEPH
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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