Planar FET-SEED integrated circuits

Structure and method for fabricating FETs and quantum well diodes on the same semi-insulating substrate where the FET is provided with enhanced protection from spurious voltages. The structure uses a deeply buried p-layer (17) in a semi-insulating substrate (14) partitioned to isolate the FET portio...

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Bibliographische Detailangaben
Hauptverfasser:	CHIROVSKY, LEO MARIA FREISHYN, D'ASARO, LUCIAN ARTHUR, PEI, SHIN-SHEM, WOODWARD, TED KIRK
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	Structure and method for fabricating FETs and quantum well diodes on the same semi-insulating substrate where the FET is provided with enhanced protection from spurious voltages. The structure uses a deeply buried p-layer (17) in a semi-insulating substrate (14) partitioned to isolate the FET portion (40) of the substrate. The same buried p-layer can be partitioned to provide the p-regions of quantum well diodes (30).