Method and apparatus for producing transparent conductive film
A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater a...
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| creator | OTA, YOSHIFUMI, NIHON SHINKU GIJUTSU K.K HIGUCHI, YASUSHI, NIHON SHINKU GIJUTSU K.K MURATA, YUZO, NIHON SHINKU GIJUTSU K.K ISHIBASHI, SATORU, NIHON SHINKU GIJUTSU K.K KOMATSU, TAKASHI, NIHON SHINKU GIJUTSU K.K NAKAMURA, KYUZO, NIHON SHINKU GIJUTSU K.K |
| description | A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging the target (14) with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The apparatus has a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering the transparent conductive film on the substrate (11) by plasma discharging generated therebetween. The apparatus has a device (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target (14), a DC power supply (19) for charging the target (14) with a DC electric field, and an RF power supply (20) for charging the target (14) with an RF electric field superimposed on the DC electric field. |
| format | Patent |
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The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging the target (14) with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The apparatus has a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering the transparent conductive film on the substrate (11) by plasma discharging generated therebetween. The apparatus has a device (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target (14), a DC power supply (19) for charging the target (14) with a DC electric field, and an RF power supply (20) for charging the target (14) with an RF electric field superimposed on the DC electric field.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1991</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910925&DB=EPODOC&CC=EP&NR=0447850A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910925&DB=EPODOC&CC=EP&NR=0447850A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OTA, YOSHIFUMI, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>HIGUCHI, YASUSHI, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>MURATA, YUZO, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>ISHIBASHI, SATORU, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>KOMATSU, TAKASHI, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>NAKAMURA, KYUZO, NIHON SHINKU GIJUTSU K.K</creatorcontrib><title>Method and apparatus for producing transparent conductive film</title><description>A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging the target (14) with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The apparatus has a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering the transparent conductive film on the substrate (11) by plasma discharging generated therebetween. The apparatus has a device (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target (14), a DC power supply (19) for charging the target (14) with a DC electric field, and an RF power supply (20) for charging the target (14) with an RF electric field superimposed on the DC electric field.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDzTS3JyE9RSMwD4oKCxKLEktJihbT8IoWCovyU0uTMvHSFkqLEvGKgVGpeiUJyfh5QtCSzLFUhLTMnl4eBNS0xpziVF0pzMyi4uYY4e-imFuTHpwI1JafmpZbEuwYYmJiYW5gaOBoZE6EEAC3gMKw</recordid><startdate>19910925</startdate><enddate>19910925</enddate><creator>OTA, YOSHIFUMI, NIHON SHINKU GIJUTSU K.K</creator><creator>HIGUCHI, YASUSHI, NIHON SHINKU GIJUTSU K.K</creator><creator>MURATA, YUZO, NIHON SHINKU GIJUTSU K.K</creator><creator>ISHIBASHI, SATORU, NIHON SHINKU GIJUTSU K.K</creator><creator>KOMATSU, TAKASHI, NIHON SHINKU GIJUTSU K.K</creator><creator>NAKAMURA, KYUZO, NIHON SHINKU GIJUTSU K.K</creator><scope>EVB</scope></search><sort><creationdate>19910925</creationdate><title>Method and apparatus for producing transparent conductive film</title><author>OTA, YOSHIFUMI, NIHON SHINKU GIJUTSU K.K ; HIGUCHI, YASUSHI, NIHON SHINKU GIJUTSU K.K ; MURATA, YUZO, NIHON SHINKU GIJUTSU K.K ; ISHIBASHI, SATORU, NIHON SHINKU GIJUTSU K.K ; KOMATSU, TAKASHI, NIHON SHINKU GIJUTSU K.K ; NAKAMURA, KYUZO, NIHON SHINKU GIJUTSU K.K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0447850A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>1991</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>OTA, YOSHIFUMI, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>HIGUCHI, YASUSHI, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>MURATA, YUZO, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>ISHIBASHI, SATORU, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>KOMATSU, TAKASHI, NIHON SHINKU GIJUTSU K.K</creatorcontrib><creatorcontrib>NAKAMURA, KYUZO, NIHON SHINKU GIJUTSU K.K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OTA, YOSHIFUMI, NIHON SHINKU GIJUTSU K.K</au><au>HIGUCHI, YASUSHI, NIHON SHINKU GIJUTSU K.K</au><au>MURATA, YUZO, NIHON SHINKU GIJUTSU K.K</au><au>ISHIBASHI, SATORU, NIHON SHINKU GIJUTSU K.K</au><au>KOMATSU, TAKASHI, NIHON SHINKU GIJUTSU K.K</au><au>NAKAMURA, KYUZO, NIHON SHINKU GIJUTSU K.K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for producing transparent conductive film</title><date>1991-09-25</date><risdate>1991</risdate><abstract>A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target (14) at 600 Oe or greater as well as by charging the target (14) with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film with an addition of a donor element depending on necessity. The apparatus has a vacuum chamber (1) adapted to support therein a substrate (11) and a target (14) in an opposed relationship for forming by sputtering the transparent conductive film on the substrate (11) by plasma discharging generated therebetween. The apparatus has a device (16) for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target (14), a DC power supply (19) for charging the target (14) with a DC electric field, and an RF power supply (20) for charging the target (14) with an RF electric field superimposed on the DC electric field.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method and apparatus for producing transparent conductive film |
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