Perimeter wafer seal and method of using the same
A seal ring presses against a wafer on a CVD chuck continuously around the outer periphery of the wafer, and with sufficient force to hold the backside of the wafer against the chuck, so no CVD material may deposit on the backside of the wafer. The seal ring has one surface for contacting the fronts...
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| creator | STUDLEY, DAVID K KELLER, ERNST |
| description | A seal ring presses against a wafer on a CVD chuck continuously around the outer periphery of the wafer, and with sufficient force to hold the backside of the wafer against the chuck, so no CVD material may deposit on the backside of the wafer. The seal ring has one surface for contacting the frontside of the wafer and a second surface that extends close to the CVD chuck, so the edge of the wafer is also excluded from CVD coating. With use of the wafer seal ring apparatus and method, CVD coating is confined to the frontside of a wafer. In a preferred embodiment, an apparatus with a slide operated by a cam lever and a tension spring for moving the seal ring and pressing it against a wafer on a CVD chuck is used with each of multiple chucks attached to a rotatable turret within a CVD chamber. |
| format | Patent |
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The seal ring has one surface for contacting the frontside of the wafer and a second surface that extends close to the CVD chuck, so the edge of the wafer is also excluded from CVD coating. With use of the wafer seal ring apparatus and method, CVD coating is confined to the frontside of a wafer. In a preferred embodiment, an apparatus with a slide operated by a cam lever and a tension spring for moving the seal ring and pressing it against a wafer on a CVD chuck is used with each of multiple chucks attached to a rotatable turret within a CVD chamber.</description><edition>6</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980401&DB=EPODOC&CC=EP&NR=0398589B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19980401&DB=EPODOC&CC=EP&NR=0398589B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>STUDLEY, DAVID K</creatorcontrib><creatorcontrib>KELLER, ERNST</creatorcontrib><title>Perimeter wafer seal and method of using the same</title><description>A seal ring presses against a wafer on a CVD chuck continuously around the outer periphery of the wafer, and with sufficient force to hold the backside of the wafer against the chuck, so no CVD material may deposit on the backside of the wafer. The seal ring has one surface for contacting the frontside of the wafer and a second surface that extends close to the CVD chuck, so the edge of the wafer is also excluded from CVD coating. With use of the wafer seal ring apparatus and method, CVD coating is confined to the frontside of a wafer. In a preferred embodiment, an apparatus with a slide operated by a cam lever and a tension spring for moving the seal ring and pressing it against a wafer on a CVD chuck is used with each of multiple chucks attached to a rotatable turret within a CVD chamber.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAMSC3KzE0tSS1SKE9MA5LFqYk5Col5KQpAwYz8FIX8NIXS4sy8dIWSjFSF4sTcVB4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEu8aYGBsaWFqYelkaEyEEgAJuCrT</recordid><startdate>19980401</startdate><enddate>19980401</enddate><creator>STUDLEY, DAVID K</creator><creator>KELLER, ERNST</creator><scope>EVB</scope></search><sort><creationdate>19980401</creationdate><title>Perimeter wafer seal and method of using the same</title><author>STUDLEY, DAVID K ; KELLER, ERNST</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0398589B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>STUDLEY, DAVID K</creatorcontrib><creatorcontrib>KELLER, ERNST</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>STUDLEY, DAVID K</au><au>KELLER, ERNST</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Perimeter wafer seal and method of using the same</title><date>1998-04-01</date><risdate>1998</risdate><abstract>A seal ring presses against a wafer on a CVD chuck continuously around the outer periphery of the wafer, and with sufficient force to hold the backside of the wafer against the chuck, so no CVD material may deposit on the backside of the wafer. The seal ring has one surface for contacting the frontside of the wafer and a second surface that extends close to the CVD chuck, so the edge of the wafer is also excluded from CVD coating. With use of the wafer seal ring apparatus and method, CVD coating is confined to the frontside of a wafer. In a preferred embodiment, an apparatus with a slide operated by a cam lever and a tension spring for moving the seal ring and pressing it against a wafer on a CVD chuck is used with each of multiple chucks attached to a rotatable turret within a CVD chamber.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Perimeter wafer seal and method of using the same |
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