METHOD AND APPARATUS FOR VAPOR-PHASE GROWTH OF AN OXIDE THIN FILM
A substrate (11) to be deposited an oxide thin film thereon is set a reactor (10). An organic metal source gas and oxygen-containing gas are introduced into the reactor to pyrolyze, thereby depositing an oxide thin film containing metal elements of the organic metal at which time an inert gas is use...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | NAKANISI, TAKATOSI SATOH, RIE EGUCHI, KAZUHIRO |
| description | A substrate (11) to be deposited an oxide thin film thereon is set a reactor (10). An organic metal source gas and oxygen-containing gas are introduced into the reactor to pyrolyze, thereby depositing an oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas. In the deposition of a thin film, the organic metal source gas and oxygen-containing gas are alternately fed into the reactor (10). |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0387456A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0387456A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0387456A33</originalsourceid><addsrcrecordid>eNrjZHD0dQ3x8HdRcPQD4oAAxyDHkNBgBTf_IIUwxwD_IN0AD8dgVwX3IP_wEA8FfzegOgX_CE8XV4UQD08_BTdPH18eBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhLvGmBgbGFuYmrmaGxMhBIAXaUqOw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND APPARATUS FOR VAPOR-PHASE GROWTH OF AN OXIDE THIN FILM</title><source>esp@cenet</source><creator>NAKANISI, TAKATOSI ; SATOH, RIE ; EGUCHI, KAZUHIRO</creator><creatorcontrib>NAKANISI, TAKATOSI ; SATOH, RIE ; EGUCHI, KAZUHIRO</creatorcontrib><description>A substrate (11) to be deposited an oxide thin film thereon is set a reactor (10). An organic metal source gas and oxygen-containing gas are introduced into the reactor to pyrolyze, thereby depositing an oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas. In the deposition of a thin film, the organic metal source gas and oxygen-containing gas are alternately fed into the reactor (10).</description><edition>5</edition><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1990</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901128&DB=EPODOC&CC=EP&NR=0387456A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19901128&DB=EPODOC&CC=EP&NR=0387456A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKANISI, TAKATOSI</creatorcontrib><creatorcontrib>SATOH, RIE</creatorcontrib><creatorcontrib>EGUCHI, KAZUHIRO</creatorcontrib><title>METHOD AND APPARATUS FOR VAPOR-PHASE GROWTH OF AN OXIDE THIN FILM</title><description>A substrate (11) to be deposited an oxide thin film thereon is set a reactor (10). An organic metal source gas and oxygen-containing gas are introduced into the reactor to pyrolyze, thereby depositing an oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas. In the deposition of a thin film, the organic metal source gas and oxygen-containing gas are alternately fed into the reactor (10).</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1990</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD0dQ3x8HdRcPQD4oAAxyDHkNBgBTf_IIUwxwD_IN0AD8dgVwX3IP_wEA8FfzegOgX_CE8XV4UQD08_BTdPH18eBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhLvGmBgbGFuYmrmaGxMhBIAXaUqOw</recordid><startdate>19901128</startdate><enddate>19901128</enddate><creator>NAKANISI, TAKATOSI</creator><creator>SATOH, RIE</creator><creator>EGUCHI, KAZUHIRO</creator><scope>EVB</scope></search><sort><creationdate>19901128</creationdate><title>METHOD AND APPARATUS FOR VAPOR-PHASE GROWTH OF AN OXIDE THIN FILM</title><author>NAKANISI, TAKATOSI ; SATOH, RIE ; EGUCHI, KAZUHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0387456A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1990</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKANISI, TAKATOSI</creatorcontrib><creatorcontrib>SATOH, RIE</creatorcontrib><creatorcontrib>EGUCHI, KAZUHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKANISI, TAKATOSI</au><au>SATOH, RIE</au><au>EGUCHI, KAZUHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR VAPOR-PHASE GROWTH OF AN OXIDE THIN FILM</title><date>1990-11-28</date><risdate>1990</risdate><abstract>A substrate (11) to be deposited an oxide thin film thereon is set a reactor (10). An organic metal source gas and oxygen-containing gas are introduced into the reactor to pyrolyze, thereby depositing an oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas. In the deposition of a thin film, the organic metal source gas and oxygen-containing gas are alternately fed into the reactor (10).</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_EP0387456A3 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD AND APPARATUS FOR VAPOR-PHASE GROWTH OF AN OXIDE THIN FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T06%3A07%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAKANISI,%20TAKATOSI&rft.date=1990-11-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0387456A3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |