IMAGE SENSING DEVICE WITH REDUCED SMEAR

IMAGE SENSING DEVICE WITH REDUCED SMEAR

In interline transfer type image sensing devices, image smear is produced when light is allowed to penetrate into the charge transfer regions of the device. In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates a refractory opaqu...

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Hauptverfasser: LOSEE, DAVID, LAWRENCE, MEHRA, MADHAV
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LOSEE, DAVID, LAWRENCE
MEHRA, MADHAV
description In interline transfer type image sensing devices, image smear is produced when light is allowed to penetrate into the charge transfer regions of the device. In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates a refractory opaque material for the light shield which is placed in close proximity to the semiconductor surface, and a flowed glass planarization layer is disposed over the light shield.
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In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates a refractory opaque material for the light shield which is placed in close proximity to the semiconductor surface, and a flowed glass planarization layer is disposed over the light shield.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD39HV0d1UIdvUL9vRzV3BxDfN0dlUI9wzxUAhydQl1dnVRCPZ1dQziYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgEGxhZmRoaGTobGRCgBAINhIxw</recordid><startdate>19940323</startdate><enddate>19940323</enddate><creator>LOSEE, DAVID, LAWRENCE</creator><creator>MEHRA, MADHAV</creator><scope>EVB</scope></search><sort><creationdate>19940323</creationdate><title>IMAGE SENSING DEVICE WITH REDUCED SMEAR</title><author>LOSEE, DAVID, LAWRENCE ; MEHRA, MADHAV</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0386211B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>1994</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LOSEE, DAVID, LAWRENCE</creatorcontrib><creatorcontrib>MEHRA, MADHAV</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LOSEE, DAVID, LAWRENCE</au><au>MEHRA, MADHAV</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMAGE SENSING DEVICE WITH REDUCED SMEAR</title><date>1994-03-23</date><risdate>1994</risdate><abstract>In interline transfer type image sensing devices, image smear is produced when light is allowed to penetrate into the charge transfer regions of the device. In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates a refractory opaque material for the light shield which is placed in close proximity to the semiconductor surface, and a flowed glass planarization layer is disposed over the light shield.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title IMAGE SENSING DEVICE WITH REDUCED SMEAR
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