Superconductive transistor

Superconductive transistor

A superconductive transistor comprising a substrate, an oxide superconductor layer epitaxially grown on said substrate, a source electrode, a drain electrode, said source electrode and said drain electrode being arranged on said oxide superconductor layer, an insulator film epitaxially grown on said...

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Hauptverfasser: KASHIWA, SUSUMU, MATSUI, MASAKAZU, NARUMI, EIKI
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Sprache:eng ; fre ; ger
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ELECTRICITY
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creator KASHIWA, SUSUMU
MATSUI, MASAKAZU
NARUMI, EIKI
description A superconductive transistor comprising a substrate, an oxide superconductor layer epitaxially grown on said substrate, a source electrode, a drain electrode, said source electrode and said drain electrode being arranged on said oxide superconductor layer, an insulator film epitaxially grown on said oxide superconductor layer and located between said two electrodes and a gate electrode located on said insulator film, wherein the following relationship is established, dc
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Since a superconductive transistor according to the invention controls the superconductive transport current that runs through the superconductor layer with zero resistance, it functions as a switch that can accommodate electric current far greater than any known device.</description><edition>6</edition><language>eng ; fre ; ger</language><subject>ELECTRICITY</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19970402&amp;DB=EPODOC&amp;CC=EP&amp;NR=0354804B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19970402&amp;DB=EPODOC&amp;CC=EP&amp;NR=0354804B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KASHIWA, SUSUMU</creatorcontrib><creatorcontrib>MATSUI, MASAKAZU</creatorcontrib><creatorcontrib>NARUMI, EIKI</creatorcontrib><title>Superconductive transistor</title><description>A superconductive transistor comprising a substrate, an oxide superconductor layer epitaxially grown on said substrate, a source electrode, a drain electrode, said source electrode and said drain electrode being arranged on said oxide superconductor layer, an insulator film epitaxially grown on said oxide superconductor layer and located between said two electrodes and a gate electrode located on said insulator film, wherein the following relationship is established, dc &lt;/= 2ROOT (2 epsilon Vf)/n, wherein dc represents the thickness of the superconductor layer, epsilon represents the dielectric constant of the superconductor layer, n represents the carrier density of the superconductor layer and Vf represents the voltage that corresponds to the forbidden band width of the superconductor layer. 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Since a superconductive transistor according to the invention controls the superconductive transport current that runs through the superconductor layer with zero resistance, it functions as a switch that can accommodate electric current far greater than any known device.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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title Superconductive transistor
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