Component for use in a diffusion furnace
Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited on a pre-shaped fibrous matrix of silicon carbide, carbon, or carbon coated silicon carbide. The high purity of the matrix prevents undesired gaseous compon...
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| creator | FOSTER, BRYAN D FONZI, FRANK |
| description | Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited on a pre-shaped fibrous matrix of silicon carbide, carbon, or carbon coated silicon carbide. The high purity of the matrix prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous re-enforcement provides strength combined with light weight. |
| format | Patent |
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The high purity of the matrix prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous re-enforcement provides strength combined with light weight.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Component for use in a diffusion furnace |
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