Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors

Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors

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Hauptverfasser: GLANG, REINHARD, KU, SAN MEI
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors
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