LOW LEAKAGE CMOS/INSULATOR SUBSTRATE DEVICES AND METHOD OF FORMING THE SAME

A method of fabricating CMOS circuit devices on an insulator substrate is disclosed in which a solid phase epitaxy process is applied to islands for the individual devices in the same step as the channel dopant implants. An ion species, preferably silicon for a silicon island, is implanted into each...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VASUDEV, PRAHALAD, K, MAYER, DONALD, C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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