Semiconductor device fabrication including a non-destructive method for examining lithographically defined features
A non-destructive double exposure method of examining photoresist features in section by, e.g., scanning electron microscopy, is described. The resist is exposed twice with one exposure defining integrated circuit features (5, 7, 9) and the other exposure defining an edge type feature (11) which ove...
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| creator | CUTHBERT, JOHN DAVID SCHROPE, DENNIS EARL YANG, TUNGSHENG |
| description | A non-destructive double exposure method of examining photoresist features in section by, e.g., scanning electron microscopy, is described. The resist is exposed twice with one exposure defining integrated circuit features (5, 7, 9) and the other exposure defining an edge type feature (11) which overlaps an integrated circuit feature (5). Resist development produces a sectioned integrated circuit feature (17) which can be examined. |
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The resist is exposed twice with one exposure defining integrated circuit features (5, 7, 9) and the other exposure defining an edge type feature (11) which overlaps an integrated circuit feature (5). Resist development produces a sectioned integrated circuit feature (17) which can be examined.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Semiconductor device fabrication including a non-destructive method for examining lithographically defined features |
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