DEVICES AND DEVICE FABRICATION WITH BOROSILICATE GLASS

Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure u...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SINGH, SHOBHA, VAN UITERT, LEGRAND, GERARD, ZYDZIK, GEORGE JOHN, CHI, GOUUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS
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