METHOD OF PRODUCING PN JUNCTIONS

METHOD OF PRODUCING PN JUNCTIONS

In a process for the stabilization of a PN junction an oxide layer (12) is produced on a semiconductor substrate (11), and above this layer a nitride layer (13) is also produced. The oxide layer (12) is wet-chemically etched following the formation and etching of the nitride layer (13). Following th...

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Hauptverfasser: SCHARF, LUDWIG, REICHERT, HANSJOERG, DECKERS, MARGARETE
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Sprache:eng ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SCHARF, LUDWIG
REICHERT, HANSJOERG
DECKERS, MARGARETE
description In a process for the stabilization of a PN junction an oxide layer (12) is produced on a semiconductor substrate (11), and above this layer a nitride layer (13) is also produced. The oxide layer (12) is wet-chemically etched following the formation and etching of the nitride layer (13). Following the wet chemical etching of the oxide layer (12), the overlapping nitride (13) is re-etched. Dopant implantation takes place in the wet-chemically-etched region. This then is followed by a diffusion. A process of this type achieves high electrical stability for an electronic component. Thereupon, the photoresist (14) or any other type of layer covering the nitride (13) is removed.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF PRODUCING PN JUNCTIONS
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