APPARATUS AND METHOD FOR LASER-INDUCED CHEMICAL VAPOR DEPOSITION

A beam of substantially coherent light passes through a window in a chamber and then through the chamber in a direction substantially parallel, and contiguous, to substrates in the chamber. The beam ionizes gases in a mixture in the chamber. The ionized gases combine to form a substance which become...

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1. Verfasser: ROCHE, GREGORY A
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description A beam of substantially coherent light passes through a window in a chamber and then through the chamber in a direction substantially parallel, and contiguous, to substrates in the chamber. The beam ionizes gases in a mixture in the chamber. The ionized gases combine to form a substance which becomes deposited on the substrate(s) as a layer or which etches a previously deposited layer on the substrate. As the beam moves through the chamber, it loses energy. Various individual, or combinations of, compensations for this loss of energy may include: (l) the substrate(s) may be tilted slightly to decrease the distance between the beam and the substrate(s) as the beam moves through the chamber; (2) the beam may be tapered in a direction along the substrate(s); (3) the rate and direction of the flow of a mixture of ionizable gases through the chamber may be adjusted; (4) the rate and direction of flow of a gas for neutralizing the ionization of the gases may be adjusted; (5) the rate of flow of the ionizable gases may be individually adjusted for each substrate; and (6) the rate and direction of flow of the neutralizing gas may be individually adjusted for each substrate. Lenses may be included in the window for producing the desired configuration of the energy beam. In another embodiment, the chamber may be disposed within a compartment. A first portion of the energy beam may be directed through the chamber. A second portion of the beam may be directed through a compartment area external to the chamber and may then be redirected to pass throuqh the chamber in a direction opposite to the first portion and at positions substantially parallel, and contiguous, to the substrate(s).
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The beam ionizes gases in a mixture in the chamber. The ionized gases combine to form a substance which becomes deposited on the substrate(s) as a layer or which etches a previously deposited layer on the substrate. As the beam moves through the chamber, it loses energy. Various individual, or combinations of, compensations for this loss of energy may include: (l) the substrate(s) may be tilted slightly to decrease the distance between the beam and the substrate(s) as the beam moves through the chamber; (2) the beam may be tapered in a direction along the substrate(s); (3) the rate and direction of the flow of a mixture of ionizable gases through the chamber may be adjusted; (4) the rate and direction of flow of a gas for neutralizing the ionization of the gases may be adjusted; (5) the rate of flow of the ionizable gases may be individually adjusted for each substrate; and (6) the rate and direction of flow of the neutralizing gas may be individually adjusted for each substrate. Lenses may be included in the window for producing the desired configuration of the energy beam. In another embodiment, the chamber may be disposed within a compartment. A first portion of the energy beam may be directed through the chamber. A second portion of the beam may be directed through a compartment area external to the chamber and may then be redirected to pass throuqh the chamber in a direction opposite to the first portion and at positions substantially parallel, and contiguous, to the substrate(s).</description><edition>4</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19880914&amp;DB=EPODOC&amp;CC=EP&amp;NR=0229633A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19880914&amp;DB=EPODOC&amp;CC=EP&amp;NR=0229633A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROCHE, GREGORY A</creatorcontrib><title>APPARATUS AND METHOD FOR LASER-INDUCED CHEMICAL VAPOR DEPOSITION</title><description>A beam of substantially coherent light passes through a window in a chamber and then through the chamber in a direction substantially parallel, and contiguous, to substrates in the chamber. The beam ionizes gases in a mixture in the chamber. The ionized gases combine to form a substance which becomes deposited on the substrate(s) as a layer or which etches a previously deposited layer on the substrate. As the beam moves through the chamber, it loses energy. Various individual, or combinations of, compensations for this loss of energy may include: (l) the substrate(s) may be tilted slightly to decrease the distance between the beam and the substrate(s) as the beam moves through the chamber; (2) the beam may be tapered in a direction along the substrate(s); (3) the rate and direction of the flow of a mixture of ionizable gases through the chamber may be adjusted; (4) the rate and direction of flow of a gas for neutralizing the ionization of the gases may be adjusted; (5) the rate of flow of the ionizable gases may be individually adjusted for each substrate; and (6) the rate and direction of flow of the neutralizing gas may be individually adjusted for each substrate. Lenses may be included in the window for producing the desired configuration of the energy beam. In another embodiment, the chamber may be disposed within a compartment. A first portion of the energy beam may be directed through the chamber. 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Lenses may be included in the window for producing the desired configuration of the energy beam. In another embodiment, the chamber may be disposed within a compartment. A first portion of the energy beam may be directed through the chamber. A second portion of the beam may be directed through a compartment area external to the chamber and may then be redirected to pass throuqh the chamber in a direction opposite to the first portion and at positions substantially parallel, and contiguous, to the substrate(s).</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
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language eng
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title APPARATUS AND METHOD FOR LASER-INDUCED CHEMICAL VAPOR DEPOSITION
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