PRODUCTION OF CARBON FILMS
The present invention provide a method for preparing graphite intercalation compounds with metal or metal compounds consisting of a simultaneous thermal decomposition of two kinds of starting materials, modified CVD (Chemical vapor deposition) method in which hydrocarbon as a source material for the...
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| creator | YOSHIMOTO, YOSHIKASU SUZUKI, TOMONARI NAKAJIMA, SHIGEO HIGASHIGAKI, YOSHIYUKI INOGUCHI, TOSHIO |
| description | The present invention provide a method for preparing graphite intercalation compounds with metal or metal compounds consisting of a simultaneous thermal decomposition of two kinds of starting materials, modified CVD (Chemical vapor deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed at a same time in a reactor in order to intercalate the metal species or metal compound into carbon being depositing on the substrate. Further, the present invention provides a doped carbon film which is capable of P-type or N-type according to kinds of dopant species obtained by partial substitution of dopants for carbon atoms which constitute graphite hexagonal net layer during the growth of carbon films, through simultaneous thermal decomposition of two kinds of source materials for carbon films and for dopant to be substituted. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0201696B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0201696B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0201696B13</originalsourceid><addsrcrecordid>eNrjZJAKCPJ3CXUO8fT3U_B3U3B2DHICstw8fXyDeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJvGuAgZGBoZmlmZOhMRFKAPACH8c</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRODUCTION OF CARBON FILMS</title><source>esp@cenet</source><creator>YOSHIMOTO, YOSHIKASU ; SUZUKI, TOMONARI ; NAKAJIMA, SHIGEO ; HIGASHIGAKI, YOSHIYUKI ; INOGUCHI, TOSHIO</creator><creatorcontrib>YOSHIMOTO, YOSHIKASU ; SUZUKI, TOMONARI ; NAKAJIMA, SHIGEO ; HIGASHIGAKI, YOSHIYUKI ; INOGUCHI, TOSHIO</creatorcontrib><description>The present invention provide a method for preparing graphite intercalation compounds with metal or metal compounds consisting of a simultaneous thermal decomposition of two kinds of starting materials, modified CVD (Chemical vapor deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed at a same time in a reactor in order to intercalate the metal species or metal compound into carbon being depositing on the substrate. Further, the present invention provides a doped carbon film which is capable of P-type or N-type according to kinds of dopant species obtained by partial substitution of dopants for carbon atoms which constitute graphite hexagonal net layer during the growth of carbon films, through simultaneous thermal decomposition of two kinds of source materials for carbon films and for dopant to be substituted.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1991</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910313&DB=EPODOC&CC=EP&NR=0201696B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19910313&DB=EPODOC&CC=EP&NR=0201696B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHIMOTO, YOSHIKASU</creatorcontrib><creatorcontrib>SUZUKI, TOMONARI</creatorcontrib><creatorcontrib>NAKAJIMA, SHIGEO</creatorcontrib><creatorcontrib>HIGASHIGAKI, YOSHIYUKI</creatorcontrib><creatorcontrib>INOGUCHI, TOSHIO</creatorcontrib><title>PRODUCTION OF CARBON FILMS</title><description>The present invention provide a method for preparing graphite intercalation compounds with metal or metal compounds consisting of a simultaneous thermal decomposition of two kinds of starting materials, modified CVD (Chemical vapor deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed at a same time in a reactor in order to intercalate the metal species or metal compound into carbon being depositing on the substrate. Further, the present invention provides a doped carbon film which is capable of P-type or N-type according to kinds of dopant species obtained by partial substitution of dopants for carbon atoms which constitute graphite hexagonal net layer during the growth of carbon films, through simultaneous thermal decomposition of two kinds of source materials for carbon films and for dopant to be substituted.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1991</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKCPJ3CXUO8fT3U_B3U3B2DHICstw8fXyDeRhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJvGuAgZGBoZmlmZOhMRFKAPACH8c</recordid><startdate>19910313</startdate><enddate>19910313</enddate><creator>YOSHIMOTO, YOSHIKASU</creator><creator>SUZUKI, TOMONARI</creator><creator>NAKAJIMA, SHIGEO</creator><creator>HIGASHIGAKI, YOSHIYUKI</creator><creator>INOGUCHI, TOSHIO</creator><scope>EVB</scope></search><sort><creationdate>19910313</creationdate><title>PRODUCTION OF CARBON FILMS</title><author>YOSHIMOTO, YOSHIKASU ; SUZUKI, TOMONARI ; NAKAJIMA, SHIGEO ; HIGASHIGAKI, YOSHIYUKI ; INOGUCHI, TOSHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0201696B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1991</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHIMOTO, YOSHIKASU</creatorcontrib><creatorcontrib>SUZUKI, TOMONARI</creatorcontrib><creatorcontrib>NAKAJIMA, SHIGEO</creatorcontrib><creatorcontrib>HIGASHIGAKI, YOSHIYUKI</creatorcontrib><creatorcontrib>INOGUCHI, TOSHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHIMOTO, YOSHIKASU</au><au>SUZUKI, TOMONARI</au><au>NAKAJIMA, SHIGEO</au><au>HIGASHIGAKI, YOSHIYUKI</au><au>INOGUCHI, TOSHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF CARBON FILMS</title><date>1991-03-13</date><risdate>1991</risdate><abstract>The present invention provide a method for preparing graphite intercalation compounds with metal or metal compounds consisting of a simultaneous thermal decomposition of two kinds of starting materials, modified CVD (Chemical vapor deposition) method in which hydrocarbon as a source material for the host graphite and other organometal reagents or metal halides for guest metal species or metal compound are decomposed at a same time in a reactor in order to intercalate the metal species or metal compound into carbon being depositing on the substrate. Further, the present invention provides a doped carbon film which is capable of P-type or N-type according to kinds of dopant species obtained by partial substitution of dopants for carbon atoms which constitute graphite hexagonal net layer during the growth of carbon films, through simultaneous thermal decomposition of two kinds of source materials for carbon films and for dopant to be substituted.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | PRODUCTION OF CARBON FILMS |
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