METHOD OF GROWING CRYSTALLINE LAYERS BY VAPOUR PHASE EPITAXY

A method of growing an epitaxial crystalline layer on a substrate which comprises the steps of (a) providing in the reaction zone of a reaction vessel a heated substrate (b) establishing a gas stream, provided by a carrier gas which gas stream comprises at least 50% by volume of a gas which suppress...

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Bibliographische Detailangaben

Hauptverfasser:	IRVINE, STUART, JAMES, CURZON 29 HUNTINGDON, MULLIN, JOHN, BRIAN THE HOO, GIESS, JEAN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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