PROCESS FOR PRODUCING A SINTERED SILICON CARBIDE/CARBON COMPOSITE CERAMIC BODY HAVING ULTRAFINE GRAIN MICROSTRUCTURE

Sintered silicon carbide/carbon composite ceramic body having a homogeneous very fine grain microstructure with at least 50 percent of its silicon carbide grains having a size not exceeding about 5 microns and an aspect ratio less than about 3, with graphite grains having an average size not exceedi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BOECKER, WOLFGANG DIETRICH GEORG, REINI, GEORGE I
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator BOECKER, WOLFGANG DIETRICH GEORG
REINI, GEORGE I
description Sintered silicon carbide/carbon composite ceramic body having a homogeneous very fine grain microstructure with at least 50 percent of its silicon carbide grains having a size not exceeding about 5 microns and an aspect ratio less than about 3, with graphite grains having an average size not exceeding that of the silicon carbide grains uniformly dispersed throughout the matrix of silicon carbide and having a density of at least 75 percent of theoretical can be made by firing of an infiltrated, microporous shaped green body having prior to infiltration a density of at least about 45 percent of theoretical, the shaped green body being infiltrated with an organic material which can be coked at elevated temperatures to form carbon, a sintering aid selected from the group consisting of aluminum, beryllium or boron or compounds containing any one or more of these or a mixture of any of the foregoing elements or compounds, silicon carbide having a surface area of from about 5 to about 100 square meters/gram and, optionally, a temporary binder at a sintering temperature of from about 1900 DEG C to about 2300 DEG C in an inert atmosphere or vacuum. The process for making such pressureless-sintered composite bodies is relatively undemanding of exact temperature/time control during sintering. Certain embodiments of such composite sintered bodies may be electrical-discharge machined. Fully dense composite bodies exhibiting no open porosity may be formed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0178753B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0178753B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0178753B13</originalsourceid><addsrcrecordid>eNqNi8EKgkAURd20iOof3g9EiYRtxzdPfaAz8mYmaCUS0ypK0P8nhT6g1TmXe-82mTuxSM5BaQUW1wHZVKDAsfEkpBdpGK0BVFKwptPKNdq2s449AZKolhEKq-9Qq9v6D40XVbIhqESxgaUX67wE9EFon2yew2uKhx93CZTksT7G8dPHaRwe8R3nnrpzml_zS1ak2R-TL1tTOMo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROCESS FOR PRODUCING A SINTERED SILICON CARBIDE/CARBON COMPOSITE CERAMIC BODY HAVING ULTRAFINE GRAIN MICROSTRUCTURE</title><source>esp@cenet</source><creator>BOECKER, WOLFGANG DIETRICH GEORG ; REINI, GEORGE I</creator><creatorcontrib>BOECKER, WOLFGANG DIETRICH GEORG ; REINI, GEORGE I</creatorcontrib><description>Sintered silicon carbide/carbon composite ceramic body having a homogeneous very fine grain microstructure with at least 50 percent of its silicon carbide grains having a size not exceeding about 5 microns and an aspect ratio less than about 3, with graphite grains having an average size not exceeding that of the silicon carbide grains uniformly dispersed throughout the matrix of silicon carbide and having a density of at least 75 percent of theoretical can be made by firing of an infiltrated, microporous shaped green body having prior to infiltration a density of at least about 45 percent of theoretical, the shaped green body being infiltrated with an organic material which can be coked at elevated temperatures to form carbon, a sintering aid selected from the group consisting of aluminum, beryllium or boron or compounds containing any one or more of these or a mixture of any of the foregoing elements or compounds, silicon carbide having a surface area of from about 5 to about 100 square meters/gram and, optionally, a temporary binder at a sintering temperature of from about 1900 DEG C to about 2300 DEG C in an inert atmosphere or vacuum. The process for making such pressureless-sintered composite bodies is relatively undemanding of exact temperature/time control during sintering. Certain embodiments of such composite sintered bodies may be electrical-discharge machined. Fully dense composite bodies exhibiting no open porosity may be formed.</description><language>eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19890913&amp;DB=EPODOC&amp;CC=EP&amp;NR=0178753B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19890913&amp;DB=EPODOC&amp;CC=EP&amp;NR=0178753B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BOECKER, WOLFGANG DIETRICH GEORG</creatorcontrib><creatorcontrib>REINI, GEORGE I</creatorcontrib><title>PROCESS FOR PRODUCING A SINTERED SILICON CARBIDE/CARBON COMPOSITE CERAMIC BODY HAVING ULTRAFINE GRAIN MICROSTRUCTURE</title><description>Sintered silicon carbide/carbon composite ceramic body having a homogeneous very fine grain microstructure with at least 50 percent of its silicon carbide grains having a size not exceeding about 5 microns and an aspect ratio less than about 3, with graphite grains having an average size not exceeding that of the silicon carbide grains uniformly dispersed throughout the matrix of silicon carbide and having a density of at least 75 percent of theoretical can be made by firing of an infiltrated, microporous shaped green body having prior to infiltration a density of at least about 45 percent of theoretical, the shaped green body being infiltrated with an organic material which can be coked at elevated temperatures to form carbon, a sintering aid selected from the group consisting of aluminum, beryllium or boron or compounds containing any one or more of these or a mixture of any of the foregoing elements or compounds, silicon carbide having a surface area of from about 5 to about 100 square meters/gram and, optionally, a temporary binder at a sintering temperature of from about 1900 DEG C to about 2300 DEG C in an inert atmosphere or vacuum. The process for making such pressureless-sintered composite bodies is relatively undemanding of exact temperature/time control during sintering. Certain embodiments of such composite sintered bodies may be electrical-discharge machined. Fully dense composite bodies exhibiting no open porosity may be formed.</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1989</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi8EKgkAURd20iOof3g9EiYRtxzdPfaAz8mYmaCUS0ypK0P8nhT6g1TmXe-82mTuxSM5BaQUW1wHZVKDAsfEkpBdpGK0BVFKwptPKNdq2s449AZKolhEKq-9Qq9v6D40XVbIhqESxgaUX67wE9EFon2yew2uKhx93CZTksT7G8dPHaRwe8R3nnrpzml_zS1ak2R-TL1tTOMo</recordid><startdate>19890913</startdate><enddate>19890913</enddate><creator>BOECKER, WOLFGANG DIETRICH GEORG</creator><creator>REINI, GEORGE I</creator><scope>EVB</scope></search><sort><creationdate>19890913</creationdate><title>PROCESS FOR PRODUCING A SINTERED SILICON CARBIDE/CARBON COMPOSITE CERAMIC BODY HAVING ULTRAFINE GRAIN MICROSTRUCTURE</title><author>BOECKER, WOLFGANG DIETRICH GEORG ; REINI, GEORGE I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0178753B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1989</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>BOECKER, WOLFGANG DIETRICH GEORG</creatorcontrib><creatorcontrib>REINI, GEORGE I</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BOECKER, WOLFGANG DIETRICH GEORG</au><au>REINI, GEORGE I</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCESS FOR PRODUCING A SINTERED SILICON CARBIDE/CARBON COMPOSITE CERAMIC BODY HAVING ULTRAFINE GRAIN MICROSTRUCTURE</title><date>1989-09-13</date><risdate>1989</risdate><abstract>Sintered silicon carbide/carbon composite ceramic body having a homogeneous very fine grain microstructure with at least 50 percent of its silicon carbide grains having a size not exceeding about 5 microns and an aspect ratio less than about 3, with graphite grains having an average size not exceeding that of the silicon carbide grains uniformly dispersed throughout the matrix of silicon carbide and having a density of at least 75 percent of theoretical can be made by firing of an infiltrated, microporous shaped green body having prior to infiltration a density of at least about 45 percent of theoretical, the shaped green body being infiltrated with an organic material which can be coked at elevated temperatures to form carbon, a sintering aid selected from the group consisting of aluminum, beryllium or boron or compounds containing any one or more of these or a mixture of any of the foregoing elements or compounds, silicon carbide having a surface area of from about 5 to about 100 square meters/gram and, optionally, a temporary binder at a sintering temperature of from about 1900 DEG C to about 2300 DEG C in an inert atmosphere or vacuum. The process for making such pressureless-sintered composite bodies is relatively undemanding of exact temperature/time control during sintering. Certain embodiments of such composite sintered bodies may be electrical-discharge machined. Fully dense composite bodies exhibiting no open porosity may be formed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_EP0178753B1
source esp@cenet
subjects ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SLAG
TREATMENT OF NATURAL STONE
title PROCESS FOR PRODUCING A SINTERED SILICON CARBIDE/CARBON COMPOSITE CERAMIC BODY HAVING ULTRAFINE GRAIN MICROSTRUCTURE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T23%3A53%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BOECKER,%20WOLFGANG%20DIETRICH%20GEORG&rft.date=1989-09-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0178753B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true