INTERCONNECTION OF ELEMENTS ON INTEGRATED CIRRCUIT SUBSTRATE

INTERCONNECTION OF ELEMENTS ON INTEGRATED CIRRCUIT SUBSTRATE

Concentric patterns of cells or macros (1a, 1b) and conductive lines 13 conserve space on a substrate having two conductive levels. Macros occupy only the first metal level M1 and lines (13) are on the second metal level M2. The M1 wiring in accordance with this invention has a 90° bend in it and is...

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Hauptverfasser: DUNHAM, BRADFORD, CALDWELL, LUTHER BOWEN, CROCETTI, MICHAEL FRANCIS
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator DUNHAM, BRADFORD
CALDWELL, LUTHER BOWEN
CROCETTI, MICHAEL FRANCIS
description Concentric patterns of cells or macros (1a, 1b) and conductive lines 13 conserve space on a substrate having two conductive levels. Macros occupy only the first metal level M1 and lines (13) are on the second metal level M2. The M1 wiring in accordance with this invention has a 90° bend in it and is generally concentric. Wiring in the M2 level is perpendicular to wiring in the M1 level spaced from it and accordingly is also concentric. Wires in the M1 level (11a, 11b) are shown dotted. Interconnection between points (9a, 9B) implies use of via holes (15a, 15b) as standard. The second metal level may also contain concentric patterns of power buses and ground buses.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title INTERCONNECTION OF ELEMENTS ON INTEGRATED CIRRCUIT SUBSTRATE
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