SINGLE AXIS COMBINED ION AND VAPOUR SOURCE
An ion chamber 1 houses a crucible anode 2 containing ion source material 3 and connected to a positive power supply. A cathode 5 is heated by current from source 7 and an electric field is established between the cathode and anode by voltage source 6. A DC bias is established by second voltage sour...
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| creator | HARPER, JAMES MCKELL EDWIN KLEINSASSER, ALAN WILLIS |
| description | An ion chamber 1 houses a crucible anode 2 containing ion source material 3 and connected to a positive power supply. A cathode 5 is heated by current from source 7 and an electric field is established between the cathode and anode by voltage source 6. A DC bias is established by second voltage source 11. A second anode 15 is connected to the anode 2 by variable resistor 16. The chamber 1 is covered by a DC biassed grid 12 and is filled with ionizable gas via inlet 40.
By varying the resistor 16 from a low value to a high value the cathode/anode current can be shifted from the auxiliary anode 15 to the crucible anode 2 thereby varying the rate of evaporation of the source material. This gives rise to an evaporant stream 8. At the same time the gas is ionized to form an ion beam 14. |
| format | Patent |
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By varying the resistor 16 from a low value to a high value the cathode/anode current can be shifted from the auxiliary anode 15 to the crucible anode 2 thereby varying the rate of evaporation of the source material. This gives rise to an evaporant stream 8. At the same time the gas is ionized to form an ion beam 14.</description><edition>4</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890412&DB=EPODOC&CC=EP&NR=0134399B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890412&DB=EPODOC&CC=EP&NR=0134399B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HARPER, JAMES MCKELL EDWIN</creatorcontrib><creatorcontrib>KLEINSASSER, ALAN WILLIS</creatorcontrib><title>SINGLE AXIS COMBINED ION AND VAPOUR SOURCE</title><description>An ion chamber 1 houses a crucible anode 2 containing ion source material 3 and connected to a positive power supply. A cathode 5 is heated by current from source 7 and an electric field is established between the cathode and anode by voltage source 6. A DC bias is established by second voltage source 11. A second anode 15 is connected to the anode 2 by variable resistor 16. The chamber 1 is covered by a DC biassed grid 12 and is filled with ionizable gas via inlet 40.
By varying the resistor 16 from a low value to a high value the cathode/anode current can be shifted from the auxiliary anode 15 to the crucible anode 2 thereby varying the rate of evaporation of the source material. This gives rise to an evaporant stream 8. At the same time the gas is ionized to form an ion beam 14.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1989</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAK9vRz93FVcIzwDFZw9vd18vRzdVHw9PdTcPRzUQhzDPAPDVIIBhLOrjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JN41wMDQ2MTY0tLJ0JgIJQD1AyQU</recordid><startdate>19890412</startdate><enddate>19890412</enddate><creator>HARPER, JAMES MCKELL EDWIN</creator><creator>KLEINSASSER, ALAN WILLIS</creator><scope>EVB</scope></search><sort><creationdate>19890412</creationdate><title>SINGLE AXIS COMBINED ION AND VAPOUR SOURCE</title><author>HARPER, JAMES MCKELL EDWIN ; KLEINSASSER, ALAN WILLIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0134399B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1989</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HARPER, JAMES MCKELL EDWIN</creatorcontrib><creatorcontrib>KLEINSASSER, ALAN WILLIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HARPER, JAMES MCKELL EDWIN</au><au>KLEINSASSER, ALAN WILLIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINGLE AXIS COMBINED ION AND VAPOUR SOURCE</title><date>1989-04-12</date><risdate>1989</risdate><abstract>An ion chamber 1 houses a crucible anode 2 containing ion source material 3 and connected to a positive power supply. A cathode 5 is heated by current from source 7 and an electric field is established between the cathode and anode by voltage source 6. A DC bias is established by second voltage source 11. A second anode 15 is connected to the anode 2 by variable resistor 16. The chamber 1 is covered by a DC biassed grid 12 and is filled with ionizable gas via inlet 40.
By varying the resistor 16 from a low value to a high value the cathode/anode current can be shifted from the auxiliary anode 15 to the crucible anode 2 thereby varying the rate of evaporation of the source material. This gives rise to an evaporant stream 8. At the same time the gas is ionized to form an ion beam 14.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SINGLE AXIS COMBINED ION AND VAPOUR SOURCE |
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