IGBT PORT DRIVE KREDSLØB OG METODE

IGBT PORT DRIVE KREDSLØB OG METODE

There are provided methods and systems for operating insulated gate bipolar transistors (IGBTs) (106,108). For example, there is provided a method that can include detecting a desaturation condition in an IGBT (106,108) and initiating a turn off procedure when desaturation is detected. The turn off...

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Hauptverfasser: TACKMAN, Terry Michael, Greenleaf, Todd David, Wagoner, Robert Gregory, SCHUETZ, Tobias
Format: Patent
Sprache:dan
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BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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creator TACKMAN, Terry Michael
Greenleaf, Todd David
Wagoner, Robert Gregory
SCHUETZ, Tobias
description There are provided methods and systems for operating insulated gate bipolar transistors (IGBTs) (106,108). For example, there is provided a method that can include detecting a desaturation condition in an IGBT (106,108) and initiating a turn off procedure when desaturation is detected. The turn off procedure can include holding a gate (120) of the IGBT at at least one voltage level intermediate between a positive rail voltage and a negative rail voltage of an operational range of the IGBT (106,108).
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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
title IGBT PORT DRIVE KREDSLØB OG METODE
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