Apparat til anbringelse af en tynd film af et materiale på et substrat og re-genereringsfremgangsmåde for et sådant apparat
The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject...
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| creator | CASSAGNE, VALERICK CHAIX, CATHERINE VILLETTE, JEROME |
| description | The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L . |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DK2264224TT3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DK2264224TT3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DK2264224TT33</originalsourceid><addsrcrecordid>eNqNTbsNwjAQTUOBgB2OAdI4ET3iIyTa9NGFnC1LtmOdj4KGbTJJFsMJDED1PnqfdfE-xoiMAmIdYOjYBkMuEaAGCiCv0IO2zi9awKMQW3QEcRpnIz27JHN_MMBUGgrENI8kzeQNZuKnsSfQAy_5LDAI4Pd2W6w05rvdDzfF_nppTreS4tBSivjIg9Ke70odaqXqpqmqfzIfN_tKcQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Apparat til anbringelse af en tynd film af et materiale på et substrat og re-genereringsfremgangsmåde for et sådant apparat</title><source>esp@cenet</source><creator>CASSAGNE, VALERICK ; CHAIX, CATHERINE ; VILLETTE, JEROME</creator><creatorcontrib>CASSAGNE, VALERICK ; CHAIX, CATHERINE ; VILLETTE, JEROME</creatorcontrib><description>The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L .</description><language>dan</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120723&DB=EPODOC&CC=DK&NR=2264224T3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120723&DB=EPODOC&CC=DK&NR=2264224T3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CASSAGNE, VALERICK</creatorcontrib><creatorcontrib>CHAIX, CATHERINE</creatorcontrib><creatorcontrib>VILLETTE, JEROME</creatorcontrib><title>Apparat til anbringelse af en tynd film af et materiale på et substrat og re-genereringsfremgangsmåde for et sådant apparat</title><description>The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L .</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNTbsNwjAQTUOBgB2OAdI4ET3iIyTa9NGFnC1LtmOdj4KGbTJJFsMJDED1PnqfdfE-xoiMAmIdYOjYBkMuEaAGCiCv0IO2zi9awKMQW3QEcRpnIz27JHN_MMBUGgrENI8kzeQNZuKnsSfQAy_5LDAI4Pd2W6w05rvdDzfF_nppTreS4tBSivjIg9Ke70odaqXqpqmqfzIfN_tKcQ</recordid><startdate>20120723</startdate><enddate>20120723</enddate><creator>CASSAGNE, VALERICK</creator><creator>CHAIX, CATHERINE</creator><creator>VILLETTE, JEROME</creator><scope>EVB</scope></search><sort><creationdate>20120723</creationdate><title>Apparat til anbringelse af en tynd film af et materiale på et substrat og re-genereringsfremgangsmåde for et sådant apparat</title><author>CASSAGNE, VALERICK ; CHAIX, CATHERINE ; VILLETTE, JEROME</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DK2264224TT33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>dan</language><creationdate>2012</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>CASSAGNE, VALERICK</creatorcontrib><creatorcontrib>CHAIX, CATHERINE</creatorcontrib><creatorcontrib>VILLETTE, JEROME</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CASSAGNE, VALERICK</au><au>CHAIX, CATHERINE</au><au>VILLETTE, JEROME</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Apparat til anbringelse af en tynd film af et materiale på et substrat og re-genereringsfremgangsmåde for et sådant apparat</title><date>2012-07-23</date><risdate>2012</risdate><abstract>The present invention concerns an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus comprises a chamber (1), a cryogenic panel (10) disposed inside the chamber, a sample holder (6) able to support a substrate, a gas injector (9) able to inject a gaseous precursor into the chamber (1), first trap means (11) connected to said vacuum chamber (1) and able to trap a part of the gaseous precursor released by said cryogenic panel (10), said first trap means (11) having a fixed pumping capacity S 1 . According to the invention, the apparatus for depositing a thin film of material on a substrate comprises second trap means (18) having a variable pumping capacity S 2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap means providing a total pumping capacity S = S 1 + S 2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber (1) under a determined pressure P L .</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Apparat til anbringelse af en tynd film af et materiale på et substrat og re-genereringsfremgangsmåde for et sådant apparat |
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