Fremgangsmåde til fremstilling af halvlederelementer

Fremgangsmåde til fremstilling af halvlederelementer

A method of manufacturing a semiconductor device comprising the steps of forming a semiconductor element on one of major surfaces of a GaAs substrate; grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of about 6 mu m or larger to make the GaAs substr...

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1. Verfasser: NISHIGUCHI, MASANORI
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Sprache:dan
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NISHIGUCHI, MASANORI
description A method of manufacturing a semiconductor device comprising the steps of forming a semiconductor element on one of major surfaces of a GaAs substrate; grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of about 6 mu m or larger to make the GaAs substrate to a predetermined thickness; and chemical etching the other surface of the substrate by 0.6 mu m or more just after the grinding step, without any further grinding treatment done on this other surface.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Fremgangsmåde til fremstilling af halvlederelementer
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