VORRICHTUNG UND VERFAHREN ZUR THERMISCHEN BEHANDLUNG VON HALBLEITERSUBSTRATEN
A dual resistive heater system includes a base or primary heater (120A), surrounded by a peripheral or edge heater (120B). Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity (130A-H). The walls of the insulate...
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| creator | JOHNSGARD, KRISTIAN E GIVENS, JAMES A SAVAS, STEPHEN E DAVIET, JEAN-FRANCOIS ATANOS, J MATTSON, S |
| description | A dual resistive heater system includes a base or primary heater (120A), surrounded by a peripheral or edge heater (120B). Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity (130A-H). The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers (130A-D) may be silicon carbide coated graphite; the outer layers (130G-H) may be opaque quartz. A vacuum spool (143) has a large conduction pathway (1010) for exhausting gases from the region of the chamber containing the resistive heaters, and a small conduction pathway (1020) for removing gases from other regions of the chamber. Temperature measurement sensors include thermocouples (610) and optical pyrometers (630), wherein the thermocouple may be used to calibrate an optical pyrometer in situ. |
| format | Patent |
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Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity (130A-H). The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers (130A-D) may be silicon carbide coated graphite; the outer layers (130G-H) may be opaque quartz. A vacuum spool (143) has a large conduction pathway (1010) for exhausting gases from the region of the chamber containing the resistive heaters, and a small conduction pathway (1020) for removing gases from other regions of the chamber. Temperature measurement sensors include thermocouples (610) and optical pyrometers (630), wherein the thermocouple may be used to calibrate an optical pyrometer in situ.</description><language>ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; BLASTING ; CHEMISTRY ; CRYSTAL GROWTH ; DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FURNACES ; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL ; HEATING ; KILNS ; LIGHTING ; MECHANICAL ENGINEERING ; METALLURGY ; OPEN SINTERING OR LIKE APPARATUS ; OVENS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; RETORTS ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WEAPONS</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070329&DB=EPODOC&CC=DE&NR=69931278T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070329&DB=EPODOC&CC=DE&NR=69931278T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOHNSGARD, KRISTIAN E</creatorcontrib><creatorcontrib>GIVENS, JAMES A</creatorcontrib><creatorcontrib>SAVAS, STEPHEN E</creatorcontrib><creatorcontrib>DAVIET, JEAN-FRANCOIS</creatorcontrib><creatorcontrib>ATANOS, J</creatorcontrib><creatorcontrib>MATTSON, S</creatorcontrib><title>VORRICHTUNG UND VERFAHREN ZUR THERMISCHEN BEHANDLUNG VON HALBLEITERSUBSTRATEN</title><description>A dual resistive heater system includes a base or primary heater (120A), surrounded by a peripheral or edge heater (120B). Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity (130A-H). The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers (130A-D) may be silicon carbide coated graphite; the outer layers (130G-H) may be opaque quartz. A vacuum spool (143) has a large conduction pathway (1010) for exhausting gases from the region of the chamber containing the resistive heaters, and a small conduction pathway (1020) for removing gases from other regions of the chamber. Temperature measurement sensors include thermocouples (610) and optical pyrometers (630), wherein the thermocouple may be used to calibrate an optical pyrometer in situ.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BLASTING</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE</subject><subject>ELECTRIC HEATING</subject><subject>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FURNACES</subject><subject>FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL</subject><subject>HEATING</subject><subject>KILNS</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>METALLURGY</subject><subject>OPEN SINTERING OR LIKE APPARATUS</subject><subject>OVENS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>RETORTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAN8w8K8nT2CAn1c1cI9XNRCHMNcnP0CHL1U4gKDVII8XAN8vUMdvYA8p1cPRz9XHxACsP8_RQ8HH2cfFw9Q1yDgkOdgkOCHENc_XgYWNMSc4pTeaE0N4OSm2uIs4duakF-fGpxQWJyal5qSbyLq5mlpbGhkblFSIiRMVGKAKJZL8I</recordid><startdate>20070329</startdate><enddate>20070329</enddate><creator>JOHNSGARD, KRISTIAN E</creator><creator>GIVENS, JAMES A</creator><creator>SAVAS, STEPHEN E</creator><creator>DAVIET, JEAN-FRANCOIS</creator><creator>ATANOS, J</creator><creator>MATTSON, S</creator><scope>EVB</scope></search><sort><creationdate>20070329</creationdate><title>VORRICHTUNG UND VERFAHREN ZUR THERMISCHEN BEHANDLUNG VON HALBLEITERSUBSTRATEN</title><author>JOHNSGARD, KRISTIAN E ; GIVENS, JAMES A ; SAVAS, STEPHEN E ; DAVIET, JEAN-FRANCOIS ; ATANOS, J ; MATTSON, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE69931278TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2007</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BLASTING</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FURNACES</topic><topic>FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL</topic><topic>HEATING</topic><topic>KILNS</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>METALLURGY</topic><topic>OPEN SINTERING OR LIKE APPARATUS</topic><topic>OVENS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>RETORTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>JOHNSGARD, KRISTIAN E</creatorcontrib><creatorcontrib>GIVENS, JAMES A</creatorcontrib><creatorcontrib>SAVAS, STEPHEN E</creatorcontrib><creatorcontrib>DAVIET, JEAN-FRANCOIS</creatorcontrib><creatorcontrib>ATANOS, J</creatorcontrib><creatorcontrib>MATTSON, S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOHNSGARD, KRISTIAN E</au><au>GIVENS, JAMES A</au><au>SAVAS, STEPHEN E</au><au>DAVIET, JEAN-FRANCOIS</au><au>ATANOS, J</au><au>MATTSON, S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VORRICHTUNG UND VERFAHREN ZUR THERMISCHEN BEHANDLUNG VON HALBLEITERSUBSTRATEN</title><date>2007-03-29</date><risdate>2007</risdate><abstract>A dual resistive heater system includes a base or primary heater (120A), surrounded by a peripheral or edge heater (120B). Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity (130A-H). The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers (130A-D) may be silicon carbide coated graphite; the outer layers (130G-H) may be opaque quartz. A vacuum spool (143) has a large conduction pathway (1010) for exhausting gases from the region of the chamber containing the resistive heaters, and a small conduction pathway (1020) for removing gases from other regions of the chamber. Temperature measurement sensors include thermocouples (610) and optical pyrometers (630), wherein the thermocouple may be used to calibrate an optical pyrometer in situ.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS BLASTING CHEMISTRY CRYSTAL GROWTH DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING METALLURGY OPEN SINTERING OR LIKE APPARATUS OVENS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RETORTS SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS |
| title | VORRICHTUNG UND VERFAHREN ZUR THERMISCHEN BEHANDLUNG VON HALBLEITERSUBSTRATEN |
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