Halbleiterstruktur mit abruptem Dotierungsprofil
A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a chan...
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| creator | CARDONE, FRANK ISMAIL, KHALID EZZELDIN CHU, JACK OON |
| description | A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a change in concentration in its first 40 ANGSTROM from the first layer of greater than 1x10 P atoms/cc. In another preferred embodiment, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention addresses the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's. |
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A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a change in concentration in its first 40 ANGSTROM from the first layer of greater than 1x10 P atoms/cc. In another preferred embodiment, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention addresses the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.</description><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070927&DB=EPODOC&CC=DE&NR=69836654T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070927&DB=EPODOC&CC=DE&NR=69836654T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CARDONE, FRANK</creatorcontrib><creatorcontrib>ISMAIL, KHALID EZZELDIN</creatorcontrib><creatorcontrib>CHU, JACK OON</creatorcontrib><title>Halbleiterstruktur mit abruptem Dotierungsprofil</title><description>A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a change in concentration in its first 40 ANGSTROM from the first layer of greater than 1x10 P atoms/cc. In another preferred embodiment, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention addresses the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwSMxJyknNLEktKi4pKs0uKS1SyM0sUUhMKiotKEnNVXDJL8lMLSrNSy8uKMpPy8zhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxLq5mlhbGZmamJiEhRsZEKQIAOw8tQw</recordid><startdate>20070927</startdate><enddate>20070927</enddate><creator>CARDONE, FRANK</creator><creator>ISMAIL, KHALID EZZELDIN</creator><creator>CHU, JACK OON</creator><scope>EVB</scope></search><sort><creationdate>20070927</creationdate><title>Halbleiterstruktur mit abruptem Dotierungsprofil</title><author>CARDONE, FRANK ; ISMAIL, KHALID EZZELDIN ; CHU, JACK OON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE69836654TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CARDONE, FRANK</creatorcontrib><creatorcontrib>ISMAIL, KHALID EZZELDIN</creatorcontrib><creatorcontrib>CHU, JACK OON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CARDONE, FRANK</au><au>ISMAIL, KHALID EZZELDIN</au><au>CHU, JACK OON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Halbleiterstruktur mit abruptem Dotierungsprofil</title><date>2007-09-27</date><risdate>2007</risdate><abstract>A structure and method of forming an abrupt doping profile are described. A perferred embodiment incorporates a substrate 32, a first epitaxial layer 36 of Ge less than the critical thickness and having a P or As concentration greater than 5x10 atoms/cc, and a second epitaxial layer 40 having a change in concentration in its first 40 ANGSTROM from the first layer of greater than 1x10 P atoms/cc. In another preferred embodiment, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention addresses the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Halbleiterstruktur mit abruptem Dotierungsprofil |
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