VERFAHREN ZUR HERSTELLUNG VON DIAMANDFILMEN UNTER VERWENDUNG EINES DAMPFPHASENSYNTHESESYSTEMS
This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission prop...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SAMORODOV, VLADIMIR ANATOLEVICH SUETIN, NIKOLAI VLADISLAVOVICH RAKHIMOV, ALEXANDR TURSUNOVICH |
| description | This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission properties. Diamond films are formed on the substrate in the gas mixture of hydrogen and carbon containing gas with last one concentration 2-10% mixture through protective grid screen is being placed between the substrate and the metal filament under the preliminary heating of the filament up to 1800-2800 C, of the substrate 650 - 900 C in the hydrogen flow, after growing a diamond film up to selected thickness the surplus of graphite phase is removed. The methane could be used as the carbon containing gas with the concentration 2-8% at the gas flow. For the case of the silicon substrate the reactor is first filled with the hydrogen flow to remove a natural silicon oxide within the temperature ranges of the metal filament and the substrate necessary for film deposition, a silicon carbide layer on the substrate is formed by introducing a methane with the concentration 5-20% into the gas flow during 4-20 minutes, after diamond film deposition under the methane in the gas flow 2-8% the surplus of graphite phase is removed during 3-10 in the hydrogen flow. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE69720791TT2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE69720791TT2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE69720791TT23</originalsourceid><addsrcrecordid>eNqNzLEKwjAUheEuDqK-Q3AXtIKlYzAnptBcS27SUkFKkTiJFur7YwUfwOks3_nnybWG09I4kLgEJwwce5RloJOozyRUIa0kpYvSTiKQhxPTowGpL0FBYKGkrXRlJIO4JW_A4HbKWF4ms3v_GOPqt4tkreGPZhOHVxfHob_FZ3x3Coc8S7dZvvM-3f-FPtbZNH4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VERFAHREN ZUR HERSTELLUNG VON DIAMANDFILMEN UNTER VERWENDUNG EINES DAMPFPHASENSYNTHESESYSTEMS</title><source>esp@cenet</source><creator>SAMORODOV, VLADIMIR ANATOLEVICH ; SUETIN, NIKOLAI VLADISLAVOVICH ; RAKHIMOV, ALEXANDR TURSUNOVICH</creator><creatorcontrib>SAMORODOV, VLADIMIR ANATOLEVICH ; SUETIN, NIKOLAI VLADISLAVOVICH ; RAKHIMOV, ALEXANDR TURSUNOVICH</creatorcontrib><description>This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission properties. Diamond films are formed on the substrate in the gas mixture of hydrogen and carbon containing gas with last one concentration 2-10% mixture through protective grid screen is being placed between the substrate and the metal filament under the preliminary heating of the filament up to 1800-2800 C, of the substrate 650 - 900 C in the hydrogen flow, after growing a diamond film up to selected thickness the surplus of graphite phase is removed. The methane could be used as the carbon containing gas with the concentration 2-8% at the gas flow. For the case of the silicon substrate the reactor is first filled with the hydrogen flow to remove a natural silicon oxide within the temperature ranges of the metal filament and the substrate necessary for film deposition, a silicon carbide layer on the substrate is formed by introducing a methane with the concentration 5-20% into the gas flow during 4-20 minutes, after diamond film deposition under the methane in the gas flow 2-8% the surplus of graphite phase is removed during 3-10 in the hydrogen flow.</description><edition>7</edition><language>ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040212&DB=EPODOC&CC=DE&NR=69720791T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040212&DB=EPODOC&CC=DE&NR=69720791T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAMORODOV, VLADIMIR ANATOLEVICH</creatorcontrib><creatorcontrib>SUETIN, NIKOLAI VLADISLAVOVICH</creatorcontrib><creatorcontrib>RAKHIMOV, ALEXANDR TURSUNOVICH</creatorcontrib><title>VERFAHREN ZUR HERSTELLUNG VON DIAMANDFILMEN UNTER VERWENDUNG EINES DAMPFPHASENSYNTHESESYSTEMS</title><description>This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission properties. Diamond films are formed on the substrate in the gas mixture of hydrogen and carbon containing gas with last one concentration 2-10% mixture through protective grid screen is being placed between the substrate and the metal filament under the preliminary heating of the filament up to 1800-2800 C, of the substrate 650 - 900 C in the hydrogen flow, after growing a diamond film up to selected thickness the surplus of graphite phase is removed. The methane could be used as the carbon containing gas with the concentration 2-8% at the gas flow. For the case of the silicon substrate the reactor is first filled with the hydrogen flow to remove a natural silicon oxide within the temperature ranges of the metal filament and the substrate necessary for film deposition, a silicon carbide layer on the substrate is formed by introducing a methane with the concentration 5-20% into the gas flow during 4-20 minutes, after diamond film deposition under the methane in the gas flow 2-8% the surplus of graphite phase is removed during 3-10 in the hydrogen flow.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwjAUheEuDqK-Q3AXtIKlYzAnptBcS27SUkFKkTiJFur7YwUfwOks3_nnybWG09I4kLgEJwwce5RloJOozyRUIa0kpYvSTiKQhxPTowGpL0FBYKGkrXRlJIO4JW_A4HbKWF4ms3v_GOPqt4tkreGPZhOHVxfHob_FZ3x3Coc8S7dZvvM-3f-FPtbZNH4</recordid><startdate>20040212</startdate><enddate>20040212</enddate><creator>SAMORODOV, VLADIMIR ANATOLEVICH</creator><creator>SUETIN, NIKOLAI VLADISLAVOVICH</creator><creator>RAKHIMOV, ALEXANDR TURSUNOVICH</creator><scope>EVB</scope></search><sort><creationdate>20040212</creationdate><title>VERFAHREN ZUR HERSTELLUNG VON DIAMANDFILMEN UNTER VERWENDUNG EINES DAMPFPHASENSYNTHESESYSTEMS</title><author>SAMORODOV, VLADIMIR ANATOLEVICH ; SUETIN, NIKOLAI VLADISLAVOVICH ; RAKHIMOV, ALEXANDR TURSUNOVICH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE69720791TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2004</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SAMORODOV, VLADIMIR ANATOLEVICH</creatorcontrib><creatorcontrib>SUETIN, NIKOLAI VLADISLAVOVICH</creatorcontrib><creatorcontrib>RAKHIMOV, ALEXANDR TURSUNOVICH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SAMORODOV, VLADIMIR ANATOLEVICH</au><au>SUETIN, NIKOLAI VLADISLAVOVICH</au><au>RAKHIMOV, ALEXANDR TURSUNOVICH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VERFAHREN ZUR HERSTELLUNG VON DIAMANDFILMEN UNTER VERWENDUNG EINES DAMPFPHASENSYNTHESESYSTEMS</title><date>2004-02-12</date><risdate>2004</risdate><abstract>This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission properties. Diamond films are formed on the substrate in the gas mixture of hydrogen and carbon containing gas with last one concentration 2-10% mixture through protective grid screen is being placed between the substrate and the metal filament under the preliminary heating of the filament up to 1800-2800 C, of the substrate 650 - 900 C in the hydrogen flow, after growing a diamond film up to selected thickness the surplus of graphite phase is removed. The methane could be used as the carbon containing gas with the concentration 2-8% at the gas flow. For the case of the silicon substrate the reactor is first filled with the hydrogen flow to remove a natural silicon oxide within the temperature ranges of the metal filament and the substrate necessary for film deposition, a silicon carbide layer on the substrate is formed by introducing a methane with the concentration 5-20% into the gas flow during 4-20 minutes, after diamond film deposition under the methane in the gas flow 2-8% the surplus of graphite phase is removed during 3-10 in the hydrogen flow.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | ger |
| recordid | cdi_epo_espacenet_DE69720791TT2 |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | VERFAHREN ZUR HERSTELLUNG VON DIAMANDFILMEN UNTER VERWENDUNG EINES DAMPFPHASENSYNTHESESYSTEMS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T11%3A03%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SAMORODOV,%20VLADIMIR%20ANATOLEVICH&rft.date=2004-02-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EDE69720791TT2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |