Prozesskammer mit innerer Tragstruktur
There is provided a chemical vapor deposition apparatus comprising a structure defining a chamber having an area for horizontal positioning of a substrate, and having chamber walls for conducting a flow of gas across a surface of the substrate, said chamber having a gas inlet extending generally lat...
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| creator | FOSTER, DERRICK W HAWKINS, MARK R JACOBS, LOREN R WENGERT, JOHN F HALPIN, MICHAEL W VYNE, ROBERT M VAN DER JEUGD, CORNELIUS A |
| description | There is provided a chemical vapor deposition apparatus comprising a structure defining a chamber having an area for horizontal positioning of a substrate, and having chamber walls for conducting a flow of gas across a surface of the substrate, said chamber having a gas inlet extending generally laterally across the width of the chamber structure; and a gas injector abutting the chamber structure adjacent said inlet, and including a plurality of gas supply passages, a gas inlet manifold connected to each of said passages, a separately adjustable metering valve apportioning flow through each of said passages, each of said passages having an outlet portion configured to cause the gas flow through the passage to diverge laterally into an expanded gas stream separated from adjacent streams, said injector further including walls that direct the gas streams into generally flat in edge-to-edge relation towards said chamber gas inlet, said chamber inlet being without partitions dividing the streams so that an edge of any one stream can mix with an edge of an adjacent stream. |
| format | Patent |
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COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; THEIR RELEVANT APPARATUS ; TRANSPORTING</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050609&DB=EPODOC&CC=DE&NR=69632597T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050609&DB=EPODOC&CC=DE&NR=69632597T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FOSTER, DERRICK W</creatorcontrib><creatorcontrib>HAWKINS, MARK R</creatorcontrib><creatorcontrib>JACOBS, LOREN R</creatorcontrib><creatorcontrib>WENGERT, JOHN F</creatorcontrib><creatorcontrib>HALPIN, MICHAEL W</creatorcontrib><creatorcontrib>VYNE, ROBERT M</creatorcontrib><creatorcontrib>VAN DER JEUGD, CORNELIUS A</creatorcontrib><title>Prozesskammer mit innerer Tragstruktur</title><description>There is provided a chemical vapor deposition apparatus comprising a structure defining a chamber having an area for horizontal positioning of a substrate, and having chamber walls for conducting a flow of gas across a surface of the substrate, said chamber having a gas inlet extending generally laterally across the width of the chamber structure; 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and a gas injector abutting the chamber structure adjacent said inlet, and including a plurality of gas supply passages, a gas inlet manifold connected to each of said passages, a separately adjustable metering valve apportioning flow through each of said passages, each of said passages having an outlet portion configured to cause the gas flow through the passage to diverge laterally into an expanded gas stream separated from adjacent streams, said injector further including walls that direct the gas streams into generally flat in edge-to-edge relation towards said chamber gas inlet, said chamber inlet being without partitions dividing the streams so that an edge of any one stream can mix with an edge of an adjacent stream.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING |
| title | Prozesskammer mit innerer Tragstruktur |
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