Ätzverfahren für Halbleiter
A process for plasma etching a compound semiconductor heterostructure, e.g. to fabricate a ridge laser on a wavelength demultiplexer comprises anisotropic etching of the semiconductor by exposure to a plasma incorporating methane, hydrogen and oxygen. The oxygen content of the plasma is derived from...
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| creator | CLEMENTS, STEVEN JOHN, STANSTED, ESSEX, GB OJHA, SURESHCHANDRA MISHRILAL, HARLOW, ESSEX CM17 03U, GB |
| description | A process for plasma etching a compound semiconductor heterostructure, e.g. to fabricate a ridge laser on a wavelength demultiplexer comprises anisotropic etching of the semiconductor by exposure to a plasma incorporating methane, hydrogen and oxygen. The oxygen content of the plasma is derived from a gaseous precursor such as carbon dioxide or nitrous oxide. |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Ätzverfahren für Halbleiter |
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