Steuerung der Strömungsdichte eines breiten Strahles
An ion beam source (10). The source includes multiple apertures (31) bounded in close proximity by an extraction electrode (34) for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam (14) which, in one utilization of the invention, is...
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| creator | BENVENISTE, VICTOR MAURICE, MAGNOLIA, MASSACHUSETTS 01930, US MCINTYRE, EDWARD KIRBY, JR., WEST ROXBURY, MASSACHUSETTS 02132, US HRYNYK, WALTER, WALTHAM, MASSACHUSETTS 02154, US |
| description | An ion beam source (10). The source includes multiple apertures (31) bounded in close proximity by an extraction electrode (34) for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam (14) which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes (40) in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate (50) separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode (70) common to all beam portions is controllably biased to further enhance control over beam portion intensity. In a typical application, the beam is a circular beam and intensity control is maintained to assure common intensity for a given radii from the beam center. |
| format | Patent |
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The source includes multiple apertures (31) bounded in close proximity by an extraction electrode (34) for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam (14) which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes (40) in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate (50) separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode (70) common to all beam portions is controllably biased to further enhance control over beam portion intensity. In a typical application, the beam is a circular beam and intensity control is maintained to assure common intensity for a given radii from the beam center.</description><edition>6</edition><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970123&DB=EPODOC&CC=DE&NR=69303299T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970123&DB=EPODOC&CC=DE&NR=69303299T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BENVENISTE, VICTOR MAURICE, MAGNOLIA, MASSACHUSETTS 01930, US</creatorcontrib><creatorcontrib>MCINTYRE, EDWARD KIRBY, JR., WEST ROXBURY, MASSACHUSETTS 02132, US</creatorcontrib><creatorcontrib>HRYNYK, WALTER, WALTHAM, MASSACHUSETTS 02154, US</creatorcontrib><title>Steuerung der Strömungsdichte eines breiten Strahles</title><description>An ion beam source (10). The source includes multiple apertures (31) bounded in close proximity by an extraction electrode (34) for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam (14) which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes (40) in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate (50) separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode (70) common to all beam portions is controllably biased to further enhance control over beam portion intensity. In a typical application, the beam is a circular beam and intensity control is maintained to assure common intensity for a given radii from the beam center.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANLkktTS0qzUtXSEktUgguKTq8LRfIK07JTM4oSVVIzcxLLVZIKkrNLEnNA0knZuSkFvMwsKYl5hSn8kJpbgYlN9cQZw_d1IL8-NTigsTk1LzUkngXVzNLYwNjI0vLkBAjY6IUAQBUQi8f</recordid><startdate>19970123</startdate><enddate>19970123</enddate><creator>BENVENISTE, VICTOR MAURICE, MAGNOLIA, MASSACHUSETTS 01930, US</creator><creator>MCINTYRE, EDWARD KIRBY, JR., WEST ROXBURY, MASSACHUSETTS 02132, US</creator><creator>HRYNYK, WALTER, WALTHAM, MASSACHUSETTS 02154, US</creator><scope>EVB</scope></search><sort><creationdate>19970123</creationdate><title>Steuerung der Strömungsdichte eines breiten Strahles</title><author>BENVENISTE, VICTOR MAURICE, MAGNOLIA, MASSACHUSETTS 01930, US ; MCINTYRE, EDWARD KIRBY, JR., WEST ROXBURY, MASSACHUSETTS 02132, US ; HRYNYK, WALTER, WALTHAM, MASSACHUSETTS 02154, US</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE69303299TT23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>1997</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>BENVENISTE, VICTOR MAURICE, MAGNOLIA, MASSACHUSETTS 01930, US</creatorcontrib><creatorcontrib>MCINTYRE, EDWARD KIRBY, JR., WEST ROXBURY, MASSACHUSETTS 02132, US</creatorcontrib><creatorcontrib>HRYNYK, WALTER, WALTHAM, MASSACHUSETTS 02154, US</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BENVENISTE, VICTOR MAURICE, MAGNOLIA, MASSACHUSETTS 01930, US</au><au>MCINTYRE, EDWARD KIRBY, JR., WEST ROXBURY, MASSACHUSETTS 02132, US</au><au>HRYNYK, WALTER, WALTHAM, MASSACHUSETTS 02154, US</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Steuerung der Strömungsdichte eines breiten Strahles</title><date>1997-01-23</date><risdate>1997</risdate><abstract>An ion beam source (10). The source includes multiple apertures (31) bounded in close proximity by an extraction electrode (34) for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam (14) which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes (40) in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate (50) separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode (70) common to all beam portions is controllably biased to further enhance control over beam portion intensity. In a typical application, the beam is a circular beam and intensity control is maintained to assure common intensity for a given radii from the beam center.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Steuerung der Strömungsdichte eines breiten Strahles |
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