Verfahren und Vorrichtung zur Plasmabehandlung
In a plasma treatment method and apparatus that can etch fine and deep grooves and holes at high speeds in a high vacuum, the gas pressure is set to less than 5 mTorr, the gas flow rate to more than 40 sccm, and the time that the reactive gas stays in the chamber to less than 300 msec. A high etchin...
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| creator | KUMIHASHI, TAKAO TACHI, SHINICHI KOBAYASHI, JUNICHI TSUJIMOTO, KAZUNORI KANETOMO, MASAFUMI MISE, NOBUYUKI USUI, TATEHITO |
| description | In a plasma treatment method and apparatus that can etch fine and deep grooves and holes at high speeds in a high vacuum, the gas pressure is set to less than 5 mTorr, the gas flow rate to more than 40 sccm, and the time that the reactive gas stays in the chamber to less than 300 msec. A high etching speed of more than 1,000 nm/min can be achieved while maintaining good directionality of ions. High exhaust speeds are used for the vacuum chamber. |
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A high etching speed of more than 1,000 nm/min can be achieved while maintaining good directionality of ions. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Verfahren und Vorrichtung zur Plasmabehandlung |
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