Verfahren zur Herstellung einer Silizidschicht durch Ionenimplantation

Disclosed is a method of making a Si-based semiconductor device comprising a contact region that comprises a thin (exemplarily less than 50 nm), substantially uniform silicide layer 91. The silicide preferably is CoSi2 or TiSi2. The method comprises implantation of the appropriate metal ions into a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WHITE, ALICE ELIZABETH, SUMMIT, NEW JERSEY 07901, US, RAFFERTY, CONOR STEFAN, BASKING RIDGE, NEW JERSEY 07920, US, AUDET, SARAH ANNE, BERKELEY HEIGHTS, NEW JERSEY 07922-2038, US, SHORT, KENNETH THOMAS, NEW PROVIDENCE, NEW JERSEY 07974, US
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
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