Composite structure used for electronic components

The composite structure comprises a single crystalline growth substrate and at least one polycrystalline diamond (-like) layer arranged on the substrate. The boundary surface (1) between the substrate (2) and the diamond layer (3) has growth seeds (4), and the axes of 50% of the seeds are tilted by...

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Bibliographische Detailangaben
Hauptverfasser:	FERGUSON, MONA., 89081 ULM, DE, FUESER, HANS-JUERGEN., 89547 GERSTETTEN, DE, STUBHAN, FRANK, 89584 EHINGEN, DE
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The composite structure comprises a single crystalline growth substrate and at least one polycrystalline diamond (-like) layer arranged on the substrate. The boundary surface (1) between the substrate (2) and the diamond layer (3) has growth seeds (4), and the axes of 50% of the seeds are tilted by up to 10 deg , esp. up to 7 deg to the corresp. axes of the crystal lattice of the substrate (2). Prodn. of the composite structure is also claimed.