Verfahren zur Herstellung von Schattenmasken
A method of manufacturing a shadow mask, comprising the steps of forming a first resist pattern (14b) having a large number of openings (16b) on one major surface of a thin metal plate (11) and a second resist pattern on the other major surface, the second resist pattern (14a) having a large number...
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creator | ICHIKAWA, KATSUMI KUDOU, MAKOTO |
description | A method of manufacturing a shadow mask, comprising the steps of forming a first resist pattern (14b) having a large number of openings (16b) on one major surface of a thin metal plate (11) and a second resist pattern on the other major surface, the second resist pattern (14a) having a large number of openings (16a) with an opening size large than that of the first resist pattern (14b), etching the thin metal plate surface having the first resist pattern (14b) to form first recesses (19), removing the first resist pattern (14b), forming an etching-resistive layer (20) on the thin metal plate surface having the first recesses (19) to fill the first recesses (19), etching the thin metal plate surface having the second resist pattern (14a) to form second recesses (21) which have a size larger than that of the first recesses (19) and communicate with the first recesses (19), treating and swelling the etching-resistive layer (20) with an alkali solution, spraying warm water to the etching-resistive layer (20) to remove the etching-resistive layer (20), and removing the second resist pattern (14a). |
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BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CINEMATOGRAPHY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MATERIALS THEREFOR ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950323&DB=EPODOC&CC=DE&NR=3851461T2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76292</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950323&DB=EPODOC&CC=DE&NR=3851461T2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ICHIKAWA, KATSUMI</creatorcontrib><creatorcontrib>KUDOU, MAKOTO</creatorcontrib><title>Verfahren zur Herstellung von Schattenmasken</title><description>A method of manufacturing a shadow mask, comprising the steps of forming a first resist pattern (14b) having a large number of openings (16b) on one major surface of a thin metal plate (11) and a second resist pattern on the other major surface, the second resist pattern (14a) having a large number of openings (16a) with an opening size large than that of the first resist pattern (14b), etching the thin metal plate surface having the first resist pattern (14b) to form first recesses (19), removing the first resist pattern (14b), forming an etching-resistive layer (20) on the thin metal plate surface having the first recesses (19) to fill the first recesses (19), etching the thin metal plate surface having the second resist pattern (14a) to form second recesses (21) which have a size larger than that of the first recesses (19) and communicate with the first recesses (19), treating and swelling the etching-resistive layer (20) with an alkali solution, spraying warm water to the etching-resistive layer (20) to remove the etching-resistive layer (20), and removing the second resist pattern (14a).</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAJSy1KS8woSs1TqCotUvBILSouSc3JKc1LVyjLz1MITs5ILClJzctNLM5OzeNhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEursYWpoYmZoYhIUbGxKgBAMT0Kog</recordid><startdate>19950323</startdate><enddate>19950323</enddate><creator>ICHIKAWA, KATSUMI</creator><creator>KUDOU, MAKOTO</creator><scope>EVB</scope></search><sort><creationdate>19950323</creationdate><title>Verfahren zur Herstellung von Schattenmasken</title><author>ICHIKAWA, KATSUMI ; 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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
title | Verfahren zur Herstellung von Schattenmasken |
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