Verfahren zum Herstellen integrierter Strukturen mit nicht-flüchtigen Speicherzellen, die selbst-ausgerichtete Siliciumschichten und dazugehörige Transistoren aufweisen

After growth of gate oxide, deposit and separation of a first polycrystalline silicon layer, growth of dielectric oxide and removal thereof from the transistor area, and deposit of a second polycrystalline layer, a single mask makes possible first etching of the second silicon layer and of the diele...

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Hauptverfasser:	CANTARELLI, DANIELE, PANSANA, PIERANGELO, CRISENZA, GIUSEPPE
Format:	Patent
Sprache:	ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	CANTARELLI, DANIELE PANSANA, PIERANGELO CRISENZA, GIUSEPPE
description	After growth of gate oxide, deposit and separation of a first polycrystalline silicon layer, growth of dielectric oxide and removal thereof from the transistor area, and deposit of a second polycrystalline layer, a single mask makes possible first etching of the second silicon layer and of the dielectric oxide and then of the first silicon layer of the gate oxide at the sides of the cell and transistor areas.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Verfahren zum Herstellen integrierter Strukturen mit nicht-flüchtigen Speicherzellen, die selbst-ausgerichtete Siliciumschichten und dazugehörige Transistoren aufweisen
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