DE3414772

PURPOSE:To obtain the titled device of a large latch-up strength without sacrificing the integration degree by a method wherein at least one of the first and second contact diffused regions is formed by superposition on the source diffused region of an adjacent MISFET with the surface impurity conce...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ASAI, SOTOJU, TOYONO, OSAKA, JP, TOKUDA, TAKESHI, ITAMI, HYOGO, JP
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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