DE3113850

PURPOSE:To share a pressure on coating resins between confronting surfaces of both electrodes of a semiconductor device and inhibit to concentrate the pressure on a silicon substrate by increasing the peripheral edges of both the electrodes than that of the substrate and forming the coating resins on the confronting surface of both the electrodes. CONSTITUTION:A projection 4b is ohmically contacted with the upper electrode 4 of a silicon substrate 1, the peripheral edges of both the electrodes 4 and 5 are laterally projected from the peripheral edge of the substrate 1, and confronting surfaces 4c, 5c are provided. Coating resins 7 are formed on the surfaces 4c and 5c. The heat expansion coefficients of the electrodes 4, 5 can be controlled by specifying the material of fiber and its arranging direction with composite metal and fiber material arranged with carbon fibers. With such material and configuration the heat expansion coefficient of the material is matched to that of the silicon in a lateral direction, and also to that of the coating resin in layer direction. Thus, when compression stress is applied thereto, the pressure can be shared by the coating films.