Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support

A layer of emitting material is applied to a retaining substrate in a process, in which the material of the emitting source is converted into a gas and then deposited onto the substrate. The emitting material from >=1 source is applied to an intermediate element from which it is deposited onto th...

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Hauptverfasser: BORISOVNA NIKITINA,IRINA, PETROVITSCH BOTSCHKAREV,ELLIN, JEVGENJEVITSCH KOROBOV,OLEG, NIKOLAJEVITSCH MASLOV,VADIM, GEORGIJEVITSCH VORONIN,NIKOLAJ
Format: Patent
Sprache:eng ; ger
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Zusammenfassung:A layer of emitting material is applied to a retaining substrate in a process, in which the material of the emitting source is converted into a gas and then deposited onto the substrate. The emitting material from >=1 source is applied to an intermediate element from which it is deposited onto the emitter retaining substrate. Pref. the transfer to and from the intermediate element is carried out by sublimation. This transfer may be carried out by a chemical gas transport reaction in presence of a carrier gas as a reagent. The two processes may be combined so that the application to the intermediate element is carried out by sublimation, while gas transport reaction is used for application from this element to the substrate.