VERFAHREN ZUR HERSTELLUNG EINES DOTIERUNGSMITTELS FUER HALBLEITER

1485484 Semi-conductor devices TEXAS INSTRUMENTS Inc 13 Sept 1974 [19 Sept 1973] 40047/74 Heading H1K A conductivity type determining dopant is diffused into a semi-conductive wafer by applying to a surface of the wafer a composition comprising tetraethyl orthosilicate, acetic acid or acetic anhydri...

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Bibliographische Detailangaben

Hauptverfasser:	LONG, MARY LUNDGREN, DALLAS, BENNEFIELD, MOLLIE ANN, ARGYLE
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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