Kraft/Drehmomentsensor
A force/torque sensor has a semiconductor region which is adapted to be subjected to a force or torque. Two control electrodes are provided on a first and a second side of the semiconductor region, the sides being arranged in spaced, opposed relationship with one another, and a current through the s...
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| creator | DORSCH, BERND SEITZER, DIETER HOHE, HANS-PETER |
| description | A force/torque sensor has a semiconductor region which is adapted to be subjected to a force or torque. Two control electrodes are provided on a first and a second side of the semiconductor region, the sides being arranged in spaced, opposed relationship with one another, and a current through the semiconductor region being producible between the control electrodes. Two sensor electrodes are provided on a third and a fourth side of the semiconductor region, the sides being also arranged in spaced, opposed relationship with one another and extending essentially at right angles to said first and second sides. A force or torque applied to the semiconductor region is determinable by detecting a voltage present between the sensor electrodes when a current flows between the control electrodes. The semiconductor region is formed by the channel of a field effect transistor, the drain an source electrodes of said field effect transistor defining the control electrodes. |
| format | Patent |
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Two control electrodes are provided on a first and a second side of the semiconductor region, the sides being arranged in spaced, opposed relationship with one another, and a current through the semiconductor region being producible between the control electrodes. Two sensor electrodes are provided on a third and a fourth side of the semiconductor region, the sides being also arranged in spaced, opposed relationship with one another and extending essentially at right angles to said first and second sides. A force or torque applied to the semiconductor region is determinable by detecting a voltage present between the sensor electrodes when a current flows between the control electrodes. The semiconductor region is formed by the channel of a field effect transistor, the drain an source electrodes of said field effect transistor defining the control electrodes.</description><language>ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080717&DB=EPODOC&CC=DE&NR=19808928B4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080717&DB=EPODOC&CC=DE&NR=19808928B4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DORSCH, BERND</creatorcontrib><creatorcontrib>SEITZER, DIETER</creatorcontrib><creatorcontrib>HOHE, HANS-PETER</creatorcontrib><title>Kraft/Drehmomentsensor</title><description>A force/torque sensor has a semiconductor region which is adapted to be subjected to a force or torque. 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The semiconductor region is formed by the channel of a field effect transistor, the drain an source electrodes of said field effect transistor defining the control electrodes.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDzLkpMK9F3KUrNyM3PTc0rKU7NK84v4mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8S6uhpYWBhaWRhZOJsbEqAEAvSwh5Q</recordid><startdate>20080717</startdate><enddate>20080717</enddate><creator>DORSCH, BERND</creator><creator>SEITZER, DIETER</creator><creator>HOHE, HANS-PETER</creator><scope>EVB</scope></search><sort><creationdate>20080717</creationdate><title>Kraft/Drehmomentsensor</title><author>DORSCH, BERND ; SEITZER, DIETER ; HOHE, HANS-PETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE19808928B43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>ger</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>DORSCH, BERND</creatorcontrib><creatorcontrib>SEITZER, DIETER</creatorcontrib><creatorcontrib>HOHE, HANS-PETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DORSCH, BERND</au><au>SEITZER, DIETER</au><au>HOHE, HANS-PETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Kraft/Drehmomentsensor</title><date>2008-07-17</date><risdate>2008</risdate><abstract>A force/torque sensor has a semiconductor region which is adapted to be subjected to a force or torque. Two control electrodes are provided on a first and a second side of the semiconductor region, the sides being arranged in spaced, opposed relationship with one another, and a current through the semiconductor region being producible between the control electrodes. Two sensor electrodes are provided on a third and a fourth side of the semiconductor region, the sides being also arranged in spaced, opposed relationship with one another and extending essentially at right angles to said first and second sides. A force or torque applied to the semiconductor region is determinable by detecting a voltage present between the sensor electrodes when a current flows between the control electrodes. The semiconductor region is formed by the channel of a field effect transistor, the drain an source electrodes of said field effect transistor defining the control electrodes.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Kraft/Drehmomentsensor |
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