Thin film semiconductor layer reproducible doping method for esp. silicon@ layer

The method involves providing a silicon substrate (1) upon which is formed an n-doped layer (2) through ion implantation. A protection layer of silicon dioxide is then formed throughout the n-doped layer through temperature treatment. A phase boundary region (4) is subsequently formed between the ox...

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Bibliographische Detailangaben

Hauptverfasser:	JACOB, KERSTIN., 12524 BERLIN, DE, LEIHKAUF, RAINER., 10249 BERLIN, DE, MOHR, ULRICH, DR., 14532 KLEINMACHNOW, DE, MUELLER, BERNT., 10961 BERLIN, DE
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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