Compatibility precision measurement mark for semiconductor photomask manufacture
The precision mark has a semiconductor device imaging region, a compatibility precision measurement mark production region, and two semiconductor element production parts. Provided in the device production region are several layers of patterns which form a semiconductor element having a predetermine...
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| creator | YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP SAITO, TAKAYUKI, TOKIO/TOKYO, JP YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP SOEDA, SHINYA, TOKIO/TOKYO, JP MINAMIDE, AYUMI, TOKIO/TOKYO, JP NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP MIYAMOTO, YUKI, TOKIO/TOKYO, JP TANIGUCHI, KOUJI, TOKIO/TOKYO, JP |
| description | The precision mark has a semiconductor device imaging region, a compatibility precision measurement mark production region, and two semiconductor element production parts. Provided in the device production region are several layers of patterns which form a semiconductor element having a predetermined shape on a semiconductor substrate (1). The two semiconductor element production parts are provided in respective semiconductor layers of the semiconductor production region, one above the other. Provided in the same respective production steps as the two semiconductor elements are respective reference marks (100,200). The latter mark (200) measures compatibility precision between the two semiconductor production parts. The two reference marks are in the form of patterns which are influenced by exposure to the same abberations as their respective production parts when they are exposed by light. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_DE19625669A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>DE19625669A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_DE19625669A13</originalsourceid><addsrcrecordid>eNqNizEOwjAMALMwIOAP4QEMBRGpY1WKGBnYKxNcEbWOo9gZ-D0ZeADT6aS7tbn3TAk0PMMS9GNTRh8kcLSEICUjYVRLkGc7cbaCFDzHV_FaLb1ZmUDmGsQygdc6bM1qgkVw9-PG7K_Do78dMPGIksBjRB0vQ9O649m5tmtO_zRfUkc4zw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Compatibility precision measurement mark for semiconductor photomask manufacture</title><source>esp@cenet</source><creator>YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP ; HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP ; SAITO, TAKAYUKI, TOKIO/TOKYO, JP ; YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP ; SOEDA, SHINYA, TOKIO/TOKYO, JP ; MINAMIDE, AYUMI, TOKIO/TOKYO, JP ; NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP ; MIYAMOTO, YUKI, TOKIO/TOKYO, JP ; TANIGUCHI, KOUJI, TOKIO/TOKYO, JP</creator><creatorcontrib>YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP ; HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP ; SAITO, TAKAYUKI, TOKIO/TOKYO, JP ; YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP ; SOEDA, SHINYA, TOKIO/TOKYO, JP ; MINAMIDE, AYUMI, TOKIO/TOKYO, JP ; NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP ; MIYAMOTO, YUKI, TOKIO/TOKYO, JP ; TANIGUCHI, KOUJI, TOKIO/TOKYO, JP</creatorcontrib><description>The precision mark has a semiconductor device imaging region, a compatibility precision measurement mark production region, and two semiconductor element production parts. Provided in the device production region are several layers of patterns which form a semiconductor element having a predetermined shape on a semiconductor substrate (1). The two semiconductor element production parts are provided in respective semiconductor layers of the semiconductor production region, one above the other. Provided in the same respective production steps as the two semiconductor elements are respective reference marks (100,200). The latter mark (200) measures compatibility precision between the two semiconductor production parts. The two reference marks are in the form of patterns which are influenced by exposure to the same abberations as their respective production parts when they are exposed by light.</description><edition>6</edition><language>eng ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES</subject><creationdate>1997</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970102&DB=EPODOC&CC=DE&NR=19625669A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19970102&DB=EPODOC&CC=DE&NR=19625669A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>SAITO, TAKAYUKI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>SOEDA, SHINYA, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>MINAMIDE, AYUMI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>MIYAMOTO, YUKI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>TANIGUCHI, KOUJI, TOKIO/TOKYO, JP</creatorcontrib><title>Compatibility precision measurement mark for semiconductor photomask manufacture</title><description>The precision mark has a semiconductor device imaging region, a compatibility precision measurement mark production region, and two semiconductor element production parts. Provided in the device production region are several layers of patterns which form a semiconductor element having a predetermined shape on a semiconductor substrate (1). The two semiconductor element production parts are provided in respective semiconductor layers of the semiconductor production region, one above the other. Provided in the same respective production steps as the two semiconductor elements are respective reference marks (100,200). The latter mark (200) measures compatibility precision between the two semiconductor production parts. The two reference marks are in the form of patterns which are influenced by exposure to the same abberations as their respective production parts when they are exposed by light.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1997</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEOwjAMALMwIOAP4QEMBRGpY1WKGBnYKxNcEbWOo9gZ-D0ZeADT6aS7tbn3TAk0PMMS9GNTRh8kcLSEICUjYVRLkGc7cbaCFDzHV_FaLb1ZmUDmGsQygdc6bM1qgkVw9-PG7K_Do78dMPGIksBjRB0vQ9O649m5tmtO_zRfUkc4zw</recordid><startdate>19970102</startdate><enddate>19970102</enddate><creator>YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP</creator><creator>HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP</creator><creator>SAITO, TAKAYUKI, TOKIO/TOKYO, JP</creator><creator>YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP</creator><creator>SOEDA, SHINYA, TOKIO/TOKYO, JP</creator><creator>MINAMIDE, AYUMI, TOKIO/TOKYO, JP</creator><creator>NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP</creator><creator>MIYAMOTO, YUKI, TOKIO/TOKYO, JP</creator><creator>TANIGUCHI, KOUJI, TOKIO/TOKYO, JP</creator><scope>EVB</scope></search><sort><creationdate>19970102</creationdate><title>Compatibility precision measurement mark for semiconductor photomask manufacture</title><author>YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP ; HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP ; SAITO, TAKAYUKI, TOKIO/TOKYO, JP ; YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP ; SOEDA, SHINYA, TOKIO/TOKYO, JP ; MINAMIDE, AYUMI, TOKIO/TOKYO, JP ; NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP ; MIYAMOTO, YUKI, TOKIO/TOKYO, JP ; TANIGUCHI, KOUJI, TOKIO/TOKYO, JP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_DE19625669A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; ger</language><creationdate>1997</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>SAITO, TAKAYUKI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>SOEDA, SHINYA, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>MINAMIDE, AYUMI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>MIYAMOTO, YUKI, TOKIO/TOKYO, JP</creatorcontrib><creatorcontrib>TANIGUCHI, KOUJI, TOKIO/TOKYO, JP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMASHITA, SHIGENORI, TOKIO/TOKYO, JP</au><au>HACHISUKA, ATSUSHI, TOKIO/TOKYO, JP</au><au>SAITO, TAKAYUKI, TOKIO/TOKYO, JP</au><au>YOSHIOKA, NOBUYUKI, TOKIO/TOKYO, JP</au><au>SOEDA, SHINYA, TOKIO/TOKYO, JP</au><au>MINAMIDE, AYUMI, TOKIO/TOKYO, JP</au><au>NARIMATSU, KOICHIRO, TOKIO/TOKYO, JP</au><au>MIYAMOTO, YUKI, TOKIO/TOKYO, JP</au><au>TANIGUCHI, KOUJI, TOKIO/TOKYO, JP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Compatibility precision measurement mark for semiconductor photomask manufacture</title><date>1997-01-02</date><risdate>1997</risdate><abstract>The precision mark has a semiconductor device imaging region, a compatibility precision measurement mark production region, and two semiconductor element production parts. Provided in the device production region are several layers of patterns which form a semiconductor element having a predetermined shape on a semiconductor substrate (1). The two semiconductor element production parts are provided in respective semiconductor layers of the semiconductor production region, one above the other. Provided in the same respective production steps as the two semiconductor elements are respective reference marks (100,200). The latter mark (200) measures compatibility precision between the two semiconductor production parts. The two reference marks are in the form of patterns which are influenced by exposure to the same abberations as their respective production parts when they are exposed by light.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; ger |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES |
| title | Compatibility precision measurement mark for semiconductor photomask manufacture |
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