Aufwachsschichten aus halbleitenden Verbindungen,hergestellt nach einem Verfahren der Schmelzepitaxie

1,255,576. Making semi-conductor structures. SIEMENS A.G. 18 Feb., 1970 [19 Feb., 1969], No. 7704/70. Heading H1K. The components 5 for a silicon-doped gallium arsenide melt are placed in a silica or carbon capsule on the end of which is an N-type gallium arsenide substrate 4 secured by the threaded...

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Hauptverfasser:	TOUCHY,DR..WOLFGANG, BUNGENSTAB,.ECKART
Format:	Patent
Sprache:	ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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